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参数资料
| 型号： | 2SD2114KT146/V |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SMT3, SC-59, 3 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 93K |
| 代理商： | 2SD2114KT146/V |
2SD2114K / 2SD2144S
Transistors
Rev.B
3/4
1
2
5
10 20
50 100 200 500 1000
10
20
50
100
200
500
1000
2000
5000
10000
Ta
=25
°C
Measured using
pulse current.
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC
(mA)
Fig.4 DC current gain vs. collector
current ( )
3V
VCE
=5V
1V
1
2
5
10 20
50 100 200
500 1000
10000
5000
2000
1000
500
200
100
50
20
10
VCE
=3V
Measured using
pulse current.
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC
(mA)
Fig.5 DC current gain vs.
collector current (
)
25
°C
25°C
Ta
=100°C
1
2
2000
1000
200
500
100
20
50
10
5
2
5
10
20
50 100 200
5001000
Ta
=25
°C
Measured using
pulse current.
10
25
50
IC/IB
=100
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(mV)
COLLECTOR CURRENT : IC
(mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current ( )
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(mV)
1
2
2000
1000
200
500
100
20
50
10
5
2
5
10
20
50 100 200 5001000
IC
/IB
=25
Measured using
pulse current.
COLLECTOR CURRENT : IC
(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (
)
Ta
=100°C
25
°C
25°C
BASE
SATURATION
VOLTAGE
:
V
BE(sat)
(mV)
COLLECTOR CURRENT : IC
(mA)
Fig.8 Base-emitter saturation
voltage vs. collector current ( )
1
2
5
10
20
50 100 200
500 1000
10000
5000
2000
1000
500
200
100
50
20
10
Ta
=25
°C
Pulsed
IC/IB
=10
25
50
100
1
2
5 10
20
50 100 200
5001000
10000
5000
2000
1000
500
200
100
50
20
10
BASE
SATURATION
VOLTAGE
:
V
BE(sat)
(mV)
COLLECTOR CURRENT : IC
(mA)
Fig.9 Base-emitter saturation voltage
vs. collector current (
)
Measured using
pulse current.
lC/lB
=10
25
°C
100
°C
Ta
=25°C
TRANSITION
FREQUENCY
:
f
T
(MHz)
EMITTER CURRENT : IE
(mA)
Fig.10 Gain bandwidth product vs.
emitter current
1 2
5 10 20 50 100 200 500 1000
10000
5000
2000
500
200
1000
100
20
50
10
Ta
=25
°C
VCE
=10V
Measured using
pulse current.
0.1 0.2
0.5 1
2
5
10 20
50 100
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob
(pF)
COLLECTOR TO BASE VOLTAGE : VCB
(V)
Fig.11 Collector output capacitance
vs. collector-base voltage
100
200
500
1000
10
20
50
2
5
1
Ta
=25
°C
f
=1MHz
IE
=0A
0.01 0.02 0.05 0.1 0.2
0.5
1
2
5
10
ON
RESISTANCE
:
Ron
(
)
BASE CURRENT : IB
(mA)
Fig.12 Output-on resistance vs.
base current
0.1
0.2
0.5
1
2
5
10
20
50
100
Ta=25
°C
f=1kHz
Vi=100mV(rms)
RL=1k
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2114KT146W | 功能描述:两极晶体管 - BJT NPN 20V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD2114KU | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | SC-59 |
| 2SD2114KV | 制造商:ROHM 制造商全称:Rohm 功能描述:High-current Gain MediumPower Transistor (20V, 0.5A) |
| 2SD2114KW | 制造商:ROHM 制造商全称:Rohm 功能描述:High-current Gain MediumPower Transistor (20V, 0.5A) |
| 2SD2115 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial Planar |
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