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参数资料
| 型号： | 2SD2134Q |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 150 V, NPN, Si, POWER TRANSISTOR |
| 封装： | ROHS COMPLIANT, MT-3-A1, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 235K |
| 代理商： | 2SD2134Q |
Power Transistors
1
Publication date: February 2003
SJD00245BED
2SD2134
Silicon NPN epitaxial planar type
For low-frequency driver , high power amplification
Complementary to 2SB1414
■ Features
Excellent collector current I
C characteristics of forward current
transfer ratio hFE
High transition frequency f
T
A complementary pair with 2SB1414, is optimum for the driver-
stage of a 60 W to 100 W output amplifier.
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 100 A, IB = 0
150
V
Emitter-base voltage (Collector open)
VEBO
IE = 10
A, I
C = 0
5
V
Forward current transfer ratio
hFE1 *
VCE = 10 V, IC = 150 mA
90
220
hFE2
VCE = 5 V, IC = 500 mA
50
Collector-emitter saturation voltage
VCE(sat)
IC
= 500 mA, I
B
= 50 mA
0.5
2.0
V
Base-emitter saturation voltage
VBE(sat)
IC = 500 mA, IB = 50 mA
1.0
2.0
V
Transition frequency
fT
VCB = 10 V, IE = 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob
VCB
= 10 V, I
E
= 0, f = 1 MHz
20
pF
(Common base, input open circuited)
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
150
V
Collector-emitter voltage (Base open)
VCEO
150
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
1A
Peak collector current
ICP
1.5
A
Collector power dissipation
PC
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE1
90 to 155
130 to 220
7.5±0.2
0.65±0.1
0.7±0.1
1.15±0.2
2.5±0.2
0.85±0.1
1.0±0.1
0.7±0.1
1.15±0.2
0.5±0.1
1
0.8 C
23
0.4±0.1
4.5±0.2
0.8 C
3.8
±
0.2
16.0
±
1.0
10.8
±
0.2
2.05
±
0.2
90
2.5
±
0.1
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2134R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 1A I(C) | TO-221VAR |
| 2SD2134S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 1A I(C) | TO-221VAR |
| 2SD2135 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 1A I(C) | TO-221VAR |
| 2SD2136 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD2136_09 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:POWER TRANSISTOR |
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