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参数资料
| 型号： | 2SD2136R |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封装： | ROHS COMPLIANT, MT-3-A1, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 238K |
| 代理商： | 2SD2136R |
Power Transistors
1
Publication date: September 2003
SJD00246BED
2SD2136
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1416
■ Features
High forward current transfer ratio h
FE which has satisfactory linearity.
Low collector-emitter saturation voltage V
CE(sat)
Allowing supply with the radial taping
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a = 25°C ± 3°C
Unit: mm
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
Collector-emitter voltage (Base open)
VCEO
60
V
Emitter-base voltage (Collector open)
VEBO
6V
Collector current
IC
3A
Peak collector current
ICP
5A
Collector power dissipation
PC
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC
= 30 mA, I
B
= 060
V
Base-emitter voltage *
1
VBE
VCE = 4 V, IC = 3 A
1.8
V
Collector-emitter cutoff current (Emitter-base short)
ICES
VCE = 60 V, VBE = 0
200
A
Collector-emitter cutoff current (Base open)
ICEO
VCE
= 30 V, I
B
= 0
300
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 01
mA
Forward current transfer ratio
hFE1 *
2
VCE = 4 V, IC = 1 A
40
250
hFE2 *
1
VCE
= 4 V, I
C
= 3 A
10
Collector-emitter saturation voltage *
1
VCE(sat)
IC = 3 A, IB = 0.375 A
1.2
V
Transition frequency
fT
VCE = 5 V, IE = 0.1 A, f = 200 MHz
220
MHz
Turn-on time
ton
IC
= 1 A, I
B1
= 0.1 A, I
B2
= 0.1 A
0.5
s
Storage time
tstg
2.5
s
Fall time
tf
0.4
s
7.5±0.2
0.65±0.1
0.7±0.1
1.15±0.2
2.5±0.2
0.85±0.1
1.0±0.1
0.7±0.1
1.15±0.2
0.5±0.1
1
0.8 C
23
0.4±0.1
4.5±0.2
0.8 C
3.8
±
0.2
16.0
±
1.0
10.8
±
0.2
2.05
±
0.2
90
2.5
±
0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
P
Q
R
hFE1
40 to 90
70 to 150
120 to 250
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2136-X-T60-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:POWER TRANSISTOR |
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