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参数资料
| 型号： | 2SD2137R |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封装： | MT-4-A1, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 196K |
| 代理商： | 2SD2137R |
Power Transistors
334
2SD2137, 2SD2137A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1417 and 2SB1417A
I Features
High forward current transfer ratio h
FE which has satisfactory
linearity
Low collector to emitter saturation voltage V
CE(sat)
Allowing supply with the radial taping
I Absolute Maximum Ratings T
C = 25°C
1:
Base
2: Collector
3:
Emitter
MT-4-A1 Package
Unit: mm
Note) *: Rank classification
Rank
Q
R
hFE1
70 to 150
120 to 250
Parameter
Symbol
Rating
Unit
Collector to base
2SD2137
VCBO
60
V
voltage
2SD2137A
80
Collector to
2SD2137
VCEO
60
V
emitter voltage
2SD2137A
80
Emitter to base voltage
VEBO
6V
Peak collector current
ICP
5A
Collector current
IC
3A
Collector power
TC = 25
°CP
C
15
W
dissipation
Ta = 25°C2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
I Electrical Characteristics T
C = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff
2SD2137
ICES
VCE = 60 V, VBE = 0
100
A
current
2SD2137A
VCE = 80 V, VBE = 0
100
Collector cutoff
2SD2137
ICEO
VCE = 30 V, IB = 0
100
A
current
2SD2137A
VCE = 60 V, IB = 0
100
Emitter cutoff current
IEBO
VEB = 6 V, IC = 0
100
A
Collector to emitter
2SD2137
VCEO
IC = 30 mA, IB = 0
60
V
voltage
2SD2137A
80
Forward current transfer ratio
hFE1 *
VCE = 4 V, IC = 1 A
70
250
hFE2
VCE = 4 V, IC = 3 A
10
Base to emitter voltage
VBE
VCE = 4 V, IC = 3 A
1.8
V
Collector to emitter saturation voltage
VCE(sat)
IC = 3 A, IB = 0.375 A
1.2
V
Transition frequency
fT
VCE = 5 V, IC = 0.2 A, f = 10 MHz
30
MHz
Turn-on time
ton
IC = 1 A, IB1 = 0.1 A, IB2 =
0.1 A,
0.3
s
Storage time
tstg
VCC = 50 V
2.5
s
Fall time
tf
0.2
s
10.0±0.2
0.65±0.1
0.35±0.1
2.5±0.2
123
0.65±0.1
1.2±0.1
1.48±0.2
2.25±0.2
C 1.0
0.55±0.1
2.5±0.2
1.05±0.1
13.0
±0.2
4.2
±0.2
18.0
±0.5
Solder
Dip
5.0±0.1
2.5
±0.1
90
1.0±0.2
Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the
rank classification.
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2138 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type Darlington(For power amplification) |
| 2SD2138/2SD2138A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2SD2138. 2SD2138A - NPN Transistor Darlington |
| 2SD2138A | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN triple diffusion planar type Darlington(For power amplification) |
| 2SD2138AP | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 2A I(C) | TO-221VAR |
| 2SD2138APA | 功能描述:TRANS NPN 80VCEO 2A MT-4 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
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