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参数资料
| 型号： | 2SD2165L |
| 元件分类： | 功率晶体管 |
| 英文描述： | 6 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 文件页数： | 1/5页 |
| 文件大小： | 118K |
| 代理商： | 2SD2165L |
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Document No. D13178EJ3V0DS00 (3rd edition)
Date Published March 2004 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD2165
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
c
2002
The mark
shows major revised points.
The 2SD2165 is a single power transistor developed especially
for high hFE. This transistor is ideal for simplifying drive circuits and
reducing power dissipation because its hFE is as high as that of
Darlington transistors, but it is a single transistor.
In addition, this transistor features a small resin-molded
insulation package, thus contributing to high-density mounting and
mounting cost reduction.
FEATURES
High hFE and low VCE(sat):
hFE
1,300 TYP. (VCE = 5.0 V, IC = 1.0 A)
VCE(SAT)
0.3 V TYP. (IC = 3.0 A, IB = 30 mA)
Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
6.0
A
Collector current (pulse)
IC(pulse)
10
Note
A
Base current (DC)
IB(DC)
1.0
A
Total power dissipation (TC = 25
°C)
PT
30
W
Total power dissipation (TA = 25
°C)
PT
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Note PW
≤ 300
s, duty cycle ≤ 10%
PACKAGE DRAWING (UNIT: mm)
10.0 ±0.3
3.2 ±0.2
φ
2.7 ±0.2
1.3 ±0.2
0.7 ±0.1
2.54 TYP.
1.5 ±0.2
12 3
4
±0.2
13.5
MIN.
12.0
±0.2
15.0
±0.3
3
±0.1
4.5 ±0.2
2.5 ±0.1
0.65 ±0.1
Electrode Connection
1. Base
2. Collector
3. Emitter
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD2165M | 6 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2SD2165 | 6 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2SD2182S | 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2182R | 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2183R | 2 A, 100 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2165-L-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD2165M | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-220VAR |
| 2SD2165-M-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD2166 | 制造商:ROHM 制造商全称:Rohm 功能描述:Low VCE(sat) Transistor(Strobe flash) |
| 2SD2166Q | 制造商:ROHM 制造商全称:Rohm 功能描述:Low VCE(sat) Transistor(Strobe flash) |
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