- 您现在的位置：买卖IC网 > PDF目录55793 > 2SD2179R (PANASONIC CORP) 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SD2179R |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, MT-2-A1, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 229K |
| 代理商： | 2SD2179R |
Transistors
1
Publication date: January 2003
SJC00244BED
2SD2179
Silicon NPN epitaxial planar type
For low-frequency output amplification
Complementary to 2SB1446
■ Features
Low collector-emitter saturation voltage V
CE(sat)
Allowing supply with the radial taping
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
50
V
Collector-emitter voltage (Base open)
VCEO
50
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
5A
Peak collector current
ICP
7A
Collector power dissipation *
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 10 A, I
E
= 050
V
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 050
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 05
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 20 V, I
E
= 0
0.1
A
Forward current transfer ratio
hFE1 *
2
VCE = 2 V, IC = 500 mA
120
340
hFE2 *
1
VCE = 2 V, IC = 2.5 A
60
Collector-emitter saturation voltage *
1
VCE(sat)
IC
= 2 A, I
B
= 100 mA
0.19
0.30
V
Base-emitter saturation voltage *
1
VBE(sat)
IC = 2 A, IB = 100 mA
0.85
1.20
V
Transition frequency
fT
VCB = 10 V, IE = 50 mA, f = 200 MHz
80
MHz
Collector output capacitance
Cob
VCB
= 10 V, I
E
= 0, f = 1 MHz
60
70
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
6.9±0.1
2.5±0.1
0.45
1.05±0.05
2.5±0.5
123
2.5±0.5
+0.10
–0.05
0.45
+0.10
–0.05
(0.8)
(0.5)
(1.0)
4.5
±
0.1
14.5
±
0.5
4.0
0.7
0.65 max.
(0.2)
1 : Emitter
2 : Collector
3 : Base
MT-2-A1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
R
S
hFE1
120 to 240
170 to 340
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD2185GS | 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2204 | 4 A, 55 V, NPN, Si, POWER TRANSISTOR |
| 2SD2255Q | 7 A, 140 V, NPN, Si, POWER TRANSISTOR |
| 2SD2264TV2/R | 3000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2337C | 2 A, 150 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2179S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | SIP |
| 2SD218 | 制造商:Panasonic Industrial Company 功能描述:XISTOR |
| 2SD2180 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:2SD2180 |
| 2SD2182 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:2SD2182 |
| 2SD2183 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 2A I(C) | TO-221VAR |
发布紧急采购，3分钟左右您将得到回复。