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参数资料
| 型号： | 2SD2216GQ |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, SSMINI3-F3, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 187K |
| 代理商： | 2SD2216GQ |
Transistors
1
Publication date: November 2008
SJC00406BED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD2216G
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB1462G
■ Features
High forward current transfer ratio h
FE
Low collector-emitter saturation voltage V
CE(sat)
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
Collector-emitter voltage (Base open)
VCEO
50
V
Emitter-base voltage (Collector open)
VEBO
7V
Collector current
IC
100
mA
Peak collector current
ICP
200
mA
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55 to +125
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 10 A, I
E
= 060
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 050
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 07
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 20 V, I
E
= 0
0.1
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 10 V, IB = 0
100
A
Forward current transfer ratio
hFE1 *
2
VCE = 10 V, IC = 2 mA
160
460
hFE2 *
1
VCE = 2 V, IC = 100 mA
90
Collector-emitter saturation voltage
VCE(sat)
IC = 100 mA, IB = 10 mA
0.1
0.3
V
Transition frequency
fT
VCB = 10 V, IE = 2 mA, f = 200 MHz
150
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
3.5
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
No rank
hFE1
160 to 260
210 to 340
290 to 460
180 to 390
Product of no-rank is not classified and have no marking symbol for rank.
■ Package
Code
SSMini3-F3
Marking Symbol: Y
Pin Name
1: Base
2: Emitter
3: Collector
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2216J | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:SILICON NPN EPITAXIAL PLANAR TYPE |
| 2SD2216J0L | 功能描述:TRANS NPN LF 50VCEO .1A SS-MINI RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SD2216L | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:For General Amplification |
| 2SD2217 | 制造商:NEC 制造商全称:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
| 2SD2217AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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