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参数资料
| 型号： | 2SD2217 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 0.3 A, 300 V, NPN, Si, POWER TRANSISTOR |
| 文件页数： | 1/4页 |
| 文件大小： | 100K |
| 代理商： | 2SD2217 |
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confirm that this is the latest version.
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1998
Document No. D16140EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
DARLINGTON POWER TRANSISTOR
2SD2217
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
The 2SD2217 is a mold power transistor developed for low-
frequency power amplifiers and low-speed switching.
This
transistor is ideal for direct driving from the IC out to drivers such as
pulse motor drivers and relay drivers in OA and FA equipment.
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
300
V
Collector to emitter voltage
VCEO
300
V
Emitter to base voltage
VEBO
7V
Collector current
IC(DC)
300
mA
Collector current
IC(pulse)*
600
mA
Base current
IB(DC)
30
mA
Total power dissipation
PT (Tc = 25
°C)
25
W
Total power dissipation
PT (Ta = 25
°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base (B)
2. Collector (C)
3. Emitter (E)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2217AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD2218 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General High-Current Switching Applications |
| 2SD2218Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 8A I(C) | TO-220VAR |
| 2SD2218R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 8A I(C) | TO-220VAR |
| 2SD2218S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 8A I(C) | TO-220VAR |
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