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参数资料
| 型号： | 2SD2274 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 90 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TOP3L, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 172K |
| 代理商： | 2SD2274 |
1
Power Transistors
2SD2274
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1501
s Features
q
Optimum for 45W HiFi output
q
High foward current transfer ratio hFE: 5000 to 30000
q
Low collector to emitter saturation voltage VCE(sat): <3.0V
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
110
90
5
7
4
50
3.5
150
–55 to +150
Unit
V
A
W
C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2
*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = 110V, IE = 0
VCE = 90V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 3A
IC = 3A, IB = 3mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 3A, IB1 = 3mA, IB2 = –3mA,
VCC = 50V
min
90
2000
5000
typ
20
2.5
3.0
0.7
max
100
30000
3
Unit
A
V
MHz
s
*h
FE2 Rank classification
Rank
Q
S
P
hFE2
5000 to 15000 7000 to 21000 8000 to 30000
TC=25°C
Ta=25
°C
Unit: mm
Internal Connection
1:Base
2:Collector
3:Emitter
TOP–3L Package
20.0
±0.5
6.0
10.0
26.0
±0.5
20.0
±0.5
1.5
2.5
Solder
Dip
10.9
±0.5
123
2.0
±0.3
3.0
±0.3
1.0
±0.2
5.0
±0.3
3.0
4.0
2.0
5.45
±0.3
0.6
±0.2
1.5
2.7
±0.3
1.5
2.0
φ 3.3±0.2
3.0
B
E
C
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD2282Q | 15 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 2SB1509Q | 15 A, 50 V, PNP, Si, POWER TRANSISTOR |
| 2SB1509R | 15 A, 50 V, PNP, Si, POWER TRANSISTOR |
| 2SD2282-S | 15 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 2SD2282S | 15 A, 50 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2275 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type Darlington |
| 2SD2275P | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-247VAR |
| 2SD2275Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-247VAR |
| 2SD2275S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-247VAR |
| 2SD2276 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type Darlington(For power amplification) |
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