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参数资料
| 型号： | 2SD2274 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 90 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TOP3L, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 172K |
| 代理商： | 2SD2274 |
2
Power Transistors
2SD2274
PC —Ta
IC —VCE
VBE(sat) —IC
VCE(sat) —IC
hFE —IC
Cob —VCB
ton, tstg, tf — IC
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
80
60
20
50
70
40
10
30
(1) T
C=Ta
(2) With a 100
× 100 × 2mm
Al heat sink
(3) Without heat sink
(P
C=3.5W)
(1)
(2)
(3)
Ambient temperature Ta (C)
Collector
power
dissipation
P
C
(W
)
012
10
8
26
4
0
6
5
4
3
2
1
T
C=25C
I
B=3mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
0.1
1
10
100
0.3
3
30
0.1
100
10
1
0.3
3
30
I
C/IB=1000
T
C=–25C
100C 25C
Collector current I
C
(A)
Base
to
emitter
saturation
voltage
V
BE(sat)
(V
)
0.1
1
10
100
0.3
3
30
0.1
100
10
1
0.3
3
30
I
C/IB=1000
T
C=100C
25C
–25C
Collector current I
C
(A)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
10
30
100
300
1000
3000
10000
30000
100000
V
CE=5V
25C
–25C
T
C=100C
Collector current I
C
(A)
Forward
current
transfer
ratio
h
FE
1
3
10
30
100
1
1000
100
10
3
30
300
I
E=0
f=1MHz
T
C=25C
Collector to base voltage V
CB
(V)
Collector
output
capacitance
C
ob
(pF
)
08
26
4
0.01
0.03
0.1
0.3
1
3
10
30
100
Pulsed t
w=1ms
Duty cycle=1%
I
C/IB=1000 (IB1=–IB2)
V
CC=50V
T
C=25C
t
stg
t
f
t
on
Collector current I
C
(A)
Switching
time
t
on
,t
stg
,t
f
(
s
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C=25C
10ms
t=1ms
DC
I
CP
I
C
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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PDF描述 |
|---|---|
| 2SD2282Q | 15 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 2SB1509Q | 15 A, 50 V, PNP, Si, POWER TRANSISTOR |
| 2SB1509R | 15 A, 50 V, PNP, Si, POWER TRANSISTOR |
| 2SD2282-S | 15 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 2SD2282S | 15 A, 50 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2275 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type Darlington |
| 2SD2275P | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-247VAR |
| 2SD2275Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-247VAR |
| 2SD2275S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-247VAR |
| 2SD2276 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type Darlington(For power amplification) |
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