参数资料
型号: 2SD2341R
厂商: PANASONIC CORP
元件分类: 功率晶体管
英文描述: 2 A, 180 V, NPN, Si, POWER TRANSISTOR
封装: MT3, 3 PIN
文件页数: 1/3页
文件大小: 183K
代理商: 2SD2341R
Power Transistors
358
2SD2341
Silicon NPN triple diffusion planar type
For power amplification
I Features
Low collector to emitter saturation voltage V
CE(sat)
High collector to emitter voltage V
CEO
Allowing automatic insertion possible with radial taping
I Absolute Maximum Ratings T
C = 25°C
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
Unit: mm
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
200
V
Collector to emitter voltage
VCEO
180
V
Emitter to base voltage
VEBO
6V
Peak collector current
ICP
3A
Collector current
IC
2A
Collector power dissipation
PC
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
I Electrical Characteristics T
C
= 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 200 V, IE = 0
50
A
Emitter cutoff current
IEBO
VEB = 4 V, IC = 0
50
A
Collector to base voltage
VCBO
IC = 500
A, I
E = 0
200
V
Collector to emitter voltage
VCEO
IC = 5 mA, IB = 0
180
V
Emitter to base voltage
VEBO
IE = 500 A, IC = 0
6
V
Forward current transfer ratio
hFE1 *
VCE = 10 V, IC = 150 mA
60
240
hFE2
VCE = 10 V, IC = 400 mA
50
Base to emitter voltage
VBE
VCE = 10 V, IC = 400 mA
1
V
Collector to emitter saturation voltage
VCE(sat)
IC = 500 mA, IB = 50 mA
1
V
Transition frequency
fT
VCB = 10 V, IC =
100 mA, f = 200 MHz
150
MHz
7.5±0.2
0.65±0.1
0.7±0.1
1.15±0.2
2.5±0.2
0.85±0.1
1.0±0.1
0.7±0.1
1.15±0.2
0.5±0.1
1
0.8 C
23
0.4±0.1
4.5±0.2
0.8 C
3.8
±0.2
16.0
±1.0
10.8
±0.2
2.05
±0.2
90
2.5
±0.1
Note) *: Rank classification
Rank
R
S
hFE1
60 to 140
100 to 240
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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