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参数资料
| 型号： | 2SD2386A |
| 元件分类： | 功率晶体管 |
| 英文描述： | 7 A, 140 V, NPN, Si, POWER TRANSISTOR |
| 文件页数： | 1/4页 |
| 文件大小： | 168K |
| 代理商： | 2SD2386A |
2SD2386
2004-07-07
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)
2SD2386
Power Amplifier Applications
High breakdown voltage: VCEO = 140 V (min)
Complementary to 2SB1557
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
140
V
Collector-emitter voltage
VCEO
140
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
7
A
Base current
IB
0.1
A
Collector power dissipation
(Tc = 25°C)
PC
70
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Equivalent Circuit
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-16C1A
Weight: 4.7 g (typ.)
BASE
EMITTER
≈ 100
COLLECTOR
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