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参数资料
| 型号： | 2SD2420Q |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220D-A1, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 209K |
| 代理商： | 2SD2420Q |
Power Transistors
1
Publication date: November 2004
SJD00267CED
2SD2420, 2SD2420A
Silicon NPN triple diffusion planar type darlington
For power amplification
Complementary to 2SB1623, 2SB1623A
■ Features
High forward current transfer ratio h
FE
Dielectric breakdown voltage of the package: > 5 kV
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
a = 25°C ± 3°C
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SD2420
VCBO
60
V
(Emitter open)
2SD2420A
80
Collector-emitter voltage
2SD2420
VCEO
60
V
(Base open)
2SD2420A
80
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
4A
Peak collector current
ICP
8A
Collector power
PC
30
W
dissipation
Ta = 25°C
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
1.4±0.2
1.6±0.2
0.8±0.1
0.55±0.15
2.54±0.30
5.08±0.50
12
3
2.6±0.1
2.9±0.2
4.6±0.2
φ 3.2±0.1
3.0
±
0.5
9.9±0.3
15.0
±
0.5
13.7
±
0.2
4.2
±
0.2
Solder
Dip
Unit: mm
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Internal Connection
B
C
E
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 30 mA, IB = 060
V
Base-emitter voltage
VBE
VCE = 3 V, IC = 3 A
2.5
V
Collector-base cutoff
2SD2420
ICBO
VCB
= 60 V, I
E
= 0
200
A
current (Emitter open)
2SD2420A
VCB = 80 V, IE = 0
200
Collector-emitter cutoff
2SD2420
ICEO
VCE = 30 V, IB = 0
500
A
current (Base open)
2SD2420A
VCE
= 40 V, I
B
= 0
500
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IC = 02
mA
Forward current transfer ratio
hFE1
VCE = 3 V, IC = 0.5 A
1 000
hFE2 *
VCE
= 3 V, I
C
= 3 A
2 000
10 000
Collector-emitter saturation voltage
VCE(sat)1
IC = 3 A, IB = 12 mA
2.0
V
VCE(sat)2
IC = 5 A, IB = 20 mA
4.0
Transition frequency
fT
VCE
= 10 V, I
C
= 0.5 A, f = 1 MHz
20
MHz
Turn-on time
ton
IC
= 3 A, I
B1
= 12 mA, I
B2
= 12 mA
0.5
s
Storage time
tstg
VCC = 50 V
4.0
s
Fall time
tf
1.0
s
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE2
2 000 to 5 000 4 000 to 10 000
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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