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参数资料
| 型号： | 2SD2463-K |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 35 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/4页 |
| 文件大小： | 103K |
| 代理商： | 2SD2463-K |
1998
Document No. D16158EJ1V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SD2463
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SD2463 is a Darlington connection transistor with on-
chip dumper diode in collector to emitter and zener diode in
collector to base.
This transistor is ideal for use in acuator
drives such as motors, relays, and solenoids.
FEATURES
Cost reduction available due to on-chip dumper diode (C to
E) and zener diode ( C to B)
Low collector saturation voltage
Insulation type package supportable for radial taping
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC
Corporation to know the specification of quality grade on the
devices and its recommended applications.
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
VCBO
31
±4
V
Collector to emitter voltage
VCEO
31
±4
V
Emitter to base voltage
VEBO
8.0
V
Collector current (DC)
IC(DC)
TC = 25
°C
±2.0
A
Collector current (pulse)
IC(pulse)
PW
≤ 10 ms, Duty cycle ≤ 50%, TC = 25°C
±3.0
A
Base current (DC)
IB(DC)
0.2
A
Total power dissipation
PT
1.0
W
Total power dissipation
PT
TC = 25
°C
6.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD247 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 80V 5A 50W BEC |
| 2SD2470TP | 功能描述:达林顿晶体管 NPN 10V 5A RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2SD24790RA | 功能描述:TRANS NPN 100VCEO 2A MT-3 RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SD2480(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SD2495 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR FM20 110V 6A 30W BCE |
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