- 您现在的位置：买卖IC网 > PDF目录33439 > 2SD2549Q (PANASONIC CORP) 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB PDF资料下载
参数资料
| 型号： | 2SD2549Q |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | TO-220D-A1, FULL PACK-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 199K |
| 代理商： | 2SD2549Q |
Power Transistors
1
Publication date: April 2003
SJD00276BED
2SD2549
Silicon NPN triple diffusion planar type
For power amplification
■ Features
High forward current transfer ratio h
FE which has satisfactory lin-
earity
Low collector-emitter saturation voltage V
CE(sat)
Full-pack package which can be installed to the heat sink with one
screw
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
1.4±0.2
1.6±0.2
0.8±0.1
0.55±0.15
2.54±0.30
5.08±0.50
12
3
2.6±0.1
2.9±0.2
4.6±0.2
φ 3.2±0.1
3.0
±
0.5
9.9±0.3
15.0
±
0.5
13.7
±
0.2
4.2
±
0.2
Solder
Dip
Unit: mm
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
80
V
Collector-emitter voltage (Base open)
VCEO
80
V
Emitter-base voltage (Collector open)
VEBO
6V
Collector current
IC
3A
Peak collector current
ICP
5A
Collector power
PC
20
W
dissipation
Ta = 25°C
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC
= 30 mA, I
B
= 080
V
Base-emitter voltage
VBE
VCE = 4 V, IC = 3 A
1.8
V
Collector-emitter cutoff current (E-B short)
ICES
VCE = 70 V, VBE = 0
100
A
Collector-emitter cutoff current (Base open)
ICEO
VCE
= 70 V, I
B
= 0
100
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 01
mA
Forward current transfer ratio
hFE1 *
VCE = 4 V, IC = 1 A
70
250
hFE2
VCE
= 4 V, I
C
= 3 A
10
Collector-emitter saturation voltage
VCE(sat)
IC = 3 A, IB = 0.375 A
0.7
V
Transition frequency
fT
VCE = 10 V, IC = 0.5 A, f = 10 MHz
30
MHz
Turn-on time
ton
IC = 1 A, IB1 = 0.1 A, IB2 = 0.1 A
0.5
s
Storage time
tstg
VCC = 50 V
4.5
s
Fall time
tf
0.5
s
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE1
70 to 150
120 to 250
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD2560O | 15 A, 150 V, NPN, Si, POWER TRANSISTOR |
| 2SD2560Y | 15 A, 150 V, NPN, Si, POWER TRANSISTOR |
| 2SD2562O | 15 A, 150 V, NPN, Si, POWER TRANSISTOR |
| 2SD2573Q | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD2573R | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2553 | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR SUB: B1BAF |
| 2SD2553306 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR SUB: B1BAFR000003 |
| 2SD2553LBMA | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD2553LBMA1 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD2553MA | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。