参数资料
型号: 2SD2562O
厂商: SANKEN ELECTRIC CO LTD
元件分类: 功率晶体管
英文描述: 15 A, 150 V, NPN, Si, POWER TRANSISTOR
封装: FM100, TO-3PF, 3 PIN
文件页数: 1/1页
文件大小: 28K
代理商: 2SD2562O
158
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1649)
Application : Audio, Series Regulator and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Ratings
150
5
15
1
85(Tc=25°C)
150
–55 to +150
Unit
V
A
W
°C
sAbsolute maximum ratings
sElectrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
Ratings
100max
150min
5000min
2.5max
3.0max
70typ
120typ
Unit
A
V
MHz
pF
Conditions
VCB=150V
VEB=5V
IC=30mA
VCE=4V, IC=10A
IC=10A, IB=10mA
VCE=12V, IE=–2A
VCB=10V, f=1MHz
Darlington
2SD2562
(Ta=25°C)
I C– V CE Characteristics (Typical)
Safe Operating Area (Single Pulse)
0
10
5
15
24
6
Collector-Emitter Voltage V CE(V)
Collector
Current
I
C
(A)
50mA
I B=0.3mA
0.5mA
0.8mA
2mA
1.0mA
3mA
10mA
1.5mA
V CE(sat) – I B Characteristics (Typical)
0
3
2
1
0.2
1
0.5
10
5
200
100
50
Base Current I B(mA)
Collector-Emitter
Saturation
Voltage
V
CE(sat)
(V)
I C=.15A
I C=.10A
I C=.5A
I C– V BE Temperature Characteristics (Typical)
0
15
5
10
0
2
2.2
1
Base-Emittor Voltage V BE(V)
Collector
Current
I
C
(A)
(V CE=4V)
125C
(Case
Temp)
25C
(Case
Temp)
–30C
(Case
Temp)
h FE– I C Characteristics (Typical)
Collector Current I C(A)
02
0.5
1
1 0
1 5
5
50000
1000
5000
10000
500
DC
Current
Gain
h
FE
(V CE=4V)
Typ
02
0.5
1
1 0
1 5
5
50000
1000
5000
10000
500
DC
Current
Gain
h
FE
(V CE=4V)
h FE– I C Temperature Characteristics (Typical)
Collector Current I C(A)
125C
–30C
25C
θj-a–t Characteristics
0.1
1.0
3.0
0.5
1
1 0
100
1000 2000
Time t(ms)
Transient
Thermal
Resistance
θ
j-a
(C/W)
f T– I E Characteristics (Typical)
(V CE=12V)
Emitter Current I E(A)
–0.05
–0.02
–01
–0.5
–1
–5
–10
0
40
20
60
80
Cut-off
Frequency
f
T
(MH
Z
)
Pc – T a Derating
100
80
60
40
20
3.5
0
Ambient Temperature Ta(C)
Maximum
Power
Dissipation
P
C
(W)
With
Infinite
heatsink
Without Heatsink
0
2 5
5 0
7 5
100
125
150
10
50
5
3
100
200
0.05
1
0.5
0.1
10
50
5
DC
100ms
10ms
Collector-Emitter Voltage V CE(V)
Collector
Current
I
C
(A)
Without Heatsink
Natural Cooling
External Dimensions FM100(TO3PF)
4.4
1.5
BE
C
5.45±0.1
3.3±0.2
1.6
3.3
1.75
0.8
±0.2
2.15
1.05
+0.2
-0.1
5.45±0.1
23.0
±0.3
16.2
9.5
±0.2
5.5
15.6±0.2
5.5±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3.0
0.8
a
b
Weight : Approx 6.5g
a. Part No.
b. Lot No.
sTypical Switching Characteristics (Common Emitter)
VCC
(V)
40
RL
(
)
4
IC
(A)
10
VBB2
(V)
–5
IB2
(mA)
–10
ton
(
s)
0.8typ
tstg
(
s)
4.0typ
tf
(
s)
1.2typ
IB1
(mA)
10
VBB1
(V)
10
B
C
E
(70
)
Equivalent circuit
hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)
相关PDF资料
PDF描述
2SD2573Q 3 A, 60 V, NPN, Si, POWER TRANSISTOR
2SD2573R 3 A, 60 V, NPN, Si, POWER TRANSISTOR
2SD2576F 3 A, 60 V, NPN, Si, POWER TRANSISTOR
2SD2584(2-7B5A) 7 A, 100 V, NPN, Si, POWER TRANSISTOR
2SD2586 5 A, 600 V, NPN, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
2SD256500A 功能描述:TRANS NPN 400VCEO 500MA MT-2 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)(最大):1A 电压 - 集电极发射极击穿(最大):30V Ib、Ic条件下的Vce饱和度(最大):200mV @ 100mA,1A 电流 - 集电极截止(最大):100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR
2SD25730QA 功能描述:TRANS NPN 60VCEO 3A MT-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)(最大):1A 电压 - 集电极发射极击穿(最大):30V Ib、Ic条件下的Vce饱和度(最大):200mV @ 100mA,1A 电流 - 集电极截止(最大):100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR
2SD2576 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SD2578 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR2SD2578-RG
2SD2578RG 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR