参数资料
型号: 2SD2586
元件分类: 功率晶体管
英文描述: 5 A, 600 V, NPN, Si, POWER TRANSISTOR
封装: LEAD FREE, 2-16E3A, 3 PIN
文件页数: 1/5页
文件大小: 617K
代理商: 2SD2586
2SD2586
2006-11-22
1
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SD2586
HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV
High Voltage
: VCBO = 1500 V
Low Saturation Voltage
: VCE (sat) = 5 V (Max.)
High Speed
: tf = 0.3 s (Typ.)
Built-in Damper Type
Collector Metal (Fin) is Fully Covered with Mold Resin.
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
CollectorBase Voltage
VCBO
1500
V
CollectorEmitter Voltage
VCEO
600
V
EmitterBase Voltage
VEBO
5
V
DC
IC
5
Collector Current
Pulse
ICP
10
A
Base Current
IB
2.5
A
Collector Power Dissipation
PC
50
W
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
EQUIVALENT CIRCUIT
MARKING
Unit: mm
JEDEC
JEITA
TOSHIBA
2-16E3A
Weight: 5.5 g (typ.)
D2586
TOSHIBA
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
相关PDF资料
PDF描述
2SD2604 5 A, 95 V, NPN, Si, POWER TRANSISTOR
2SD2611E 7 A, 80 V, NPN, Si, POWER TRANSISTOR
2SD2611F 7 A, 80 V, NPN, Si, POWER TRANSISTOR
2SD2611D 7 A, 80 V, NPN, Si, POWER TRANSISTOR
2SD2614 5 A, 70 V, NPN, Si, POWER TRANSISTOR
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