参数资料
型号: 2SD2551
元件分类: 功率晶体管
英文描述: 5 A, 600 V, NPN, Si, POWER TRANSISTOR
封装: LEAD FREE, 2-16E3A, 3 PIN
文件页数: 1/5页
文件大小: 486K
代理商: 2SD2551
2SD2551
2006-11-22
1
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SD2551
HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV
High Voltage
: VCBO = 1700 V
Low Saturation Voltage
: VCE (sat) = 5.0 V (Max.)
High Speed
: tf = 1.0 μs (Max.)
Built-in Damper Type
Collector Metal (Fin) is Fully Covered with Mold Resin.
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
CollectorBase Voltage
VCBO
1700
V
CollectorEmitter Voltage
VCEO
600
V
EmitterBase Voltage
VEBO
5
V
DC
IC
5
Collector Current
Pulse
ICP
10
A
Base Current
IB
2.5
A
Collector Power Dissipation
PC
50
W
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
EQUIVALENT CIRCUIT
Unit: mm
JEDEC
JEITA
TOSHIBA
2-16E3A
Weight: 5.5 g (typ.)
相关PDF资料
PDF描述
2SD2559 8 A, 600 V, NPN, Si, POWER TRANSISTOR
2SD2561P 17 A, 150 V, NPN, Si, POWER TRANSISTOR
2SD2599 3.5 A, 600 V, NPN, Si, POWER TRANSISTOR
2SD2634 8 A, 800 V, NPN, Si, POWER TRANSISTOR
2SD2649 6 A, 700 V, NPN, Si, POWER TRANSISTOR
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