参数资料
型号: 2SD2639E
厂商: SANYO SEMICONDUCTOR CO LTD
元件分类: 功率晶体管
英文描述: 12 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封装: TO-220, 3 PIN
文件页数: 1/4页
文件大小: 48K
代理商: 2SD2639E
2SD2639
No.6960-1/4
Features
Wide ASO because of on-chip ballast resistance.
Good dependence of fT on current and good HF characteristic.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
160
V
Collector-to-Emitter Voltage
VCEO
140
V
Emitter-to-Base Voltage
VEBO
6V
Collector Current
IC
12
A
Collector Current (Pulse)
ICP
15
A
Collector Dissipation
PC
Tc=25°C80
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--40 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=80V, IE=0A
0.1
mA
Emitter Cutoff Current
IEBO
VEB=4V, IC=0A
0.1
mA
DC Current Gain
hFE1VCE=5V, IC=1A
60*
200*
hFE2VCE=5V, IC=6A
20
Gain-Bandwidth Product
fT
VCE=5V, IC=1A
15
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
210
pF
Continued on next page.
* : The 2SD2639 is classified by 1A hFE as follows :
Rank
D
E
hFE
60 to 120
100 to 200
www.semiconductor-sanyo.com/network
Ordering number : EN6960A
D2408DA MS IM / 62501 TS IM TA-3139, 3140
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
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equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
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thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
SANYO Semiconductors
DATA SHEET
2SD2639
NPN Triple Diffused Planar Silicon Transistor
140V / 12A, AF 60W Output Applications
相关PDF资料
PDF描述
2SD2639 12 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD2639D 12 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD2693AP 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD2693P 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD2693AQ 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
相关代理商/技术参数
参数描述
2SD2641 制造商:Sanken Electric Co Ltd 功能描述:Box 制造商:Sanken Electric Co Ltd 功能描述:Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN DARL 110V 6A TO3P
2SD2642 制造商:Sanken Electric Co Ltd 功能描述:Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN DARL 110V 6A TO220F
2SD2643 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN DARL 110V 6A TO3PF
2SD2646-YD 制造商:ON Semiconductor 功能描述:
2SD2652T106 功能描述:两极晶体管 - BJT NPN 12V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2