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参数资料
| 型号： | 2SD2641 |
| 厂商： | SANKEN ELECTRIC CO LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 6 A, 110 V, NPN, Si, POWER TRANSISTOR |
| 封装： | MT100, TO-3P, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 28K |
| 代理商： | 2SD2641 |
160
Darlington
2SD2641
I C– V CE Characteristics (Typical)
h FE– I C Characteristics (Typical)
h FE– I C Temperature Characteristics (Typical)
θj-a–t Characteristics
I C– V BE Temperature Characteristics (Typical)
V CE(sat) – I B Characteristics (Typical)
Pc – T a Derating
Safe Operating Area (Single Pulse)
f T– I E Characteristics (Typical)
0
2
4
6
26
4
Collector-Emitter Voltage V CE(V)
Collector
Current
I
C
(A)
I B=0.1mA
5mA
1mA
0.5mA
0.4mA
0.3mA
0.2mA
Collector Current I C(A)
DC
Current
Gain
h
FE
0.5
1
5
1
1 0
100
1000
5
5 0
500
2000
Time t(ms)
Transient
Thermal
Resistance
θ
j-a
(C/W)
Base-Emittor Voltage V BE(V)
Collector
Current
I
C
(A)
60
40
20
3.5
0
2 5
5 0
7 5
100
125
150
Ambient Temperature Ta(C)
Maximum
Power
Dissipation
P
C
(W)
With
Infinite
heatsink
Without Heatsink
10
50
5
3
100
200
0.05
1
0.5
0.1
10
20
5
Collector-Emitter Voltage V CE(V)
Collector
Current
I
C
(A)
DC
100ms
10ms
Base Current I B(mA)
Collector-Emitter
Saturation
Voltage
V
CE(sat)
(V)
Collector Current I C(A)
DC
Current
Gain
h
FE
–0.02
–0.1
–1
–6
0
40
20
80
60
Cut-off
Frequency
f
T
(MH
Z
)
(V CE=12V)
Emitter Current I E(A)
Typ
Without Heatsink
Natural Cooling
0
3
2
1
0.1
1
0.5
10
5
100
50
I C=5A
I C=3A
0.01
0.1
0.5
1
6
5
1000
500
100
5000
10000
50000
(V CE=4V)
0
6
4
2
0
2.5
2
1
(V CE=4V)
125C
(Case
Temp)
25C
(Case
Temp)
–30C
(Case
Temp)
0.01
0.1
0.5
1
6
5
1000
500
100
5000
10000
50000
(V CE=4V)
125C
25C
–30C
Application : Audio, Series Regulator and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Ratings
110
5
6
1
60(Tc=25°C)
150
–55 to +150
Unit
V
A
W
°C
sAbsolute maximum ratings
sElectrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
Ratings
100max
110min
5000min
2.5max
3.0max
60typ
55typ
Unit
A
V
MHz
pF
Conditions
VCB=110V
VEB=5V
IC=30mA
VCE=4V, IC=5A
IC=5A, IB=5mA
VCE=12V, IE=–2A
VCB=10V, f=1MHz
(Ta=25°C)
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685)
sTypical Switching Characteristics (Common Emitter)
VCC
(V)
30
RL
(
)
6
IC
(A)
5
VBB2
(V)
–5
IB2
(mA)
–5
ton
(
s)
0.8typ
tstg
(
s)
6.2typ
tf
(
s)
1.1typ
IB1
(mA)
5
VBB1
(V)
10
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
19.9
±0.3
4.0
2.0
5.0
±0.2
1.8
3.2±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
BE
5.45±0.1
C
4.8±0.2
0.65
+0.2
-0.1
1.4
2.0±0.1
a
b
Weight : Approx 6.0g
a. Part No.
b. Lot No.
B
C
E
(70
)
Equivalent circuit
hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2642 | 制造商:Sanken Electric Co Ltd 功能描述:Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN DARL 110V 6A TO220F |
| 2SD2643 | 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN DARL 110V 6A TO3PF |
| 2SD2646-YD | 制造商:ON Semiconductor 功能描述: |
| 2SD2652T106 | 功能描述:两极晶体管 - BJT NPN 12V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD2653KT146 | 功能描述:两极晶体管 - BJT NPN 12V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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