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参数资料
| 型号： | 2SD2645 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TO-3PMLH, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 33K |
| 代理商： | 2SD2645 |
2SD2645
No.6897-1/4
Features
High speed.
High breakdown voltage(VCBO=1500V).
High reliability(Adoption of HVP process).
Adoption of MBIT process.
On-chip damper diode.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
1500
V
Collector-to-Emitter Voltage
VCEO
800
V
Emitter-to-Base Voltage
VEBO
5V
Collector Current
IC
10
A
Collector Current (Pulse)
ICP
25
A
Collector Dissipation
PC
3.0
W
Tc=25
°C80
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=800V, IE=0
10
A
ICES
VCE=1500V, RBE=0
1.0
mA
Collector Sustain Voltage
VCEO(sus)
IC=100mA, IB=0
800
V
Emitter Cutoff Current
IEBO
VEB=4V, IC=0
40
130
mA
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=7.2A, IB=1.44A
3
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=7.2A, IB=1.44A
1.5
V
DC Current Gain
hFE1VCE=5V, IC=1A
15
hFE2VCE=5V, IC=8A
5
8
Diode Forward Voltage
VF
IEC =8A
2
V
Fall Time
tf
IC=5A, IB1=1A, IB2=--2A
0.3
s
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6897B
D1503 TS IM TA-100990 / 52101 TS IM TA-3147 / 13001 TS IM TA-3088
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SD2645
NPN Triple Diffused Planar Silicon Transistor
Color TV Horizontal Deflection
Output Applications
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2646-YD | 制造商:ON Semiconductor 功能描述: |
| 2SD2652T106 | 功能描述:两极晶体管 - BJT NPN 12V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD2653KT146 | 功能描述:两极晶体管 - BJT NPN 12V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD2653TL | 功能描述:两极晶体管 - BJT NPN 12V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD2654TLV | 功能描述:两极晶体管 - BJT NPN 50V 150MA RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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