参数资料
型号: 2SD2716
元件分类: 功率晶体管
英文描述: 6 A, 600 V, NPN, Si, POWER TRANSISTOR
封装: LEAD FREE, TO-3P, 2-16E3A, 3 PIN
文件页数: 2/5页
文件大小: 179K
代理商: 2SD2716
2SD2716
2006-11-22
2
Marking
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cutoff current
ICBO
VCB = 1500 V, IE = 0
1
mA
Emitter cutoff current
IEBO
VEB = 5 V, IC = 0
50
125
mA
Emitterbase breakdown voltage
V (BR) EBO
IE = 400 mA, IB = 0
5
V
hFE (1)
VCE = 5 V, IC = 1 A
15
33
DC current gain
hFE (2)
VCE = 5 V, IC = 4 A
5
8.2
Collectoremitter saturation voltage
VCE (sat)
IC = 4A, IB = 0.8 A
5
V
Baseemitter saturation voltage
VBE (sat)
IC = 4 A, IB = 0.8 A
0.92
1.05
V
Forward voltage (damper diode)
VF
IF = 6 A
1.35
1.6
V
Transition frequency
fT
VCE = 10 V, IC = 0.1 A
2
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
63
pF
Storage time
tstg
4.5
Switching time
Fall time
tf
ICP = 4 A, IB1 (end) = 0.8 A
fH = 15.75 kHz
0.3
s
D2716
TOSHIBA
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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