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参数资料
| 型号： | 2SD2716 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 6 A, 600 V, NPN, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, TO-3P, 2-16E3A, 3 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 179K |
| 代理商： | 2SD2716 |
2SD2716
2006-11-22
4
0
20
40
60
80
0
20 40 60 80 100 120 140 160
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001
0.01
0.1
1
10
100
1000
Pulse width tw (s)
rth(j-c)－tw
TC ＝ 25℃ (Infinite heat sink)
Curves should be applied in
the thermal limited area.
(Single non-repetitive pulse)
0.01
0.1
1
10
100
1
10
100
1000
Safe Operating Area
* Single non-repetitive
pulse TC = 25°C
Curves must be derated
linearly with increase in
temperature.
C
o
llec
to
rpo
we
rdis
si
pa
tion
P
C
(W
)
PC－TC
Collector－emitter voltage
VCE (V)
Case temperature
TC (°C)
Infinite heat sink
0.001
0.01
0.1
1
10
100
10
100
1000
10000
Reverse Bias－Safe Operating Area
@ TC = 25°C
Non-repeated
pulse
lB2 = －3A
Collector－emitter voltage
VCE (V)
Col
le
cto
rc
ur
rent
I C
(A)
0
2
4
6
8
10
00.4
0.8
1.2
1.6
2
IF－VF
Open base
Instantaneous forward voltage
VF (V)
In
st
anta
n
eo
us
f
or
w
ar
d
cur
rent
I F
(A)
VCBO max
100μs*
IC max (pulsed)*
Col
le
cto
rcur
rent
I C
(A)
T
ran
si
en
tth
er
m
al
im
p
ed
an
ce
(j
un
ct
io
n
－
ca
se
)
r th
(j-c
)(°
C
/W
)
10
100
1m
10m
100m
TC = 100℃
25
－
25
230V, 18A
IC max (18A)
10μs*
IC max (pulsed)*
IC max
(continuous)*
1ms*
100ms*
10ms*
DC operation
(TC = 25℃)*
VCEO max
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PDF描述 |
|---|---|
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2719(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:Darlington Trans.NPN 60V 0.8A hfe2000min |
| 2SD273 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 800V 5A 80W BEC |
| 2SD274 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 800V 5A 80W BEC |
| 2SD299 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATSUSHITA TRANS. TO-3 1500V 5A 16W BEC |
| 2SD30 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2SD30 |
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