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参数资料
| 型号： | 2SD592Q |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | ROHS COMPLIANT, TO-92-B1, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 446K |
| 代理商： | 2SD592Q |
Transistors
Publication date: May 2006
SJC00344AED
1
2SD0592 (2SD592)
Silicon NPN epitaxial planar type
For low frequency amplication
Complementary to 2SB0621 (2SB621)
Features
Large collector power dissipation P
C
Low collector-emitter saturation voltage V
CE(sat)
Absolute Maximum Ratings
Ta = 25
aa
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
25
V
Emitter-base voltage (Collector open)
VEBO
5
V
Collector current
IC
1
A
Peak collector current
ICP
1.5
A
Collector power dissipation
PC
750
mW
Junction temperature
Tj
TT
150
°
C
Storage temperature
Tstg
TT
–55 to +150
°
C
Electrical Characteristics
Ta = 25
aa
°
C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10
C
A, IE = 0
EE
30
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, I
C
B = 0
25
V
Emitter-base voltage (Collector open)
VEBO
IE = 10
EE
A, IC = 0
C
5
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 0
EE
0.1
A
Forward current transfer ratio
hFE1
hh *
VCE = 10 V, I
CE
C = 500 mA
C
85
340
hFE2
hh
VCE = 5 V, I
CE
C = 1 A
C
50
Collector-emitter saturation voltage
VCE(sat) IC = 500 mA, I
C
B = 50 mA
0.2
0.4
V
Base-emitter saturation voltage
VBE(sat)
V
IC = 500 mA, I
C
B = 50 mA
0.85
1.2
V
Collector output capacitance
(Common base, input open circuited)
Cob
VCB = 10 V, IE = 0, f = 1 MHz
EE
20
pF
Transition frequency
fT
ff
VCB = 10 V, IE = —50 mA, f = 200 MHz
EE
200
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classication
Rank
Q
R
S
hFE1
hh
85 to 170
120 to 240
170 to 340
Note) The part number in the parenthesis shows conventional part number.
Unit: mm
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
5.0±0.2
0.7±0.1
0.45+0.15
–0.1
2.5+0.6
–0.2
0.45+0.15
–0.1
2.5
1
2 3
+0.6
–0.2
4.0±0.2
5.1
±0.
2
12.
9
±0.
5
2.
3
±0
.2
0.
7
±0.
2
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD592R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-226 |
| 2SD592S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-226 |
| 2SD596 | 制造商:NEC 制造商全称:NEC 功能描述:AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
| 2SD596A | 制造商:NEC 制造商全称:NEC 功能描述:AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
| 2SD596DV1 | 制造商:NEC 制造商全称:NEC 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 700MA I(C) | SOT-346 |
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