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参数资料
| 型号： | 2SD602S |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封装： | MINI3-G1, SC-59, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 174K |
| 代理商： | 2SD602S |
545
Transistor
2SD0602, 2SD0602A
PC — Ta
IC — VCE
IC — IB
VCE(sat) — IC
VBE(sat) — IC
hFE — IC
fT — IE
Cob — VCB
VCER — RBE
0
160
40
120
80
140
20
100
60
0
240
200
160
120
80
40
Ambient temperature Ta (C)
Collector
power
dissipation
P
C
(mW
)
020
16
412
8
0
800
600
200
500
700
400
100
300
Ta=25C
I
B=10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(mA
)
010
8
26
4
0
800
600
200
500
700
400
100
300
V
CE=10V
Ta=25C
Base current I
B
(mA)
Collector
current
I
C
(mA
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C/IB=10
25C
–25C
Ta=75C
Collector current I
C
(A)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C/IB=10
Ta=–25C
25C
75C
Collector current I
C
(A)
Base
to
emitter
saturation
voltage
V
BE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0
300
250
200
150
100
50
V
CE=10V
Ta=75C
25C
–25C
Collector current I
C
(A)
Forward
current
transfer
ratio
h
FE
1
10
100
1000
3
30
300
0
120
100
80
60
40
20
I
C=2mA
Ta=25C
2SD602A
2SD602
Base to emitter resistance R
BE
(k
)
Collector
to
emitter
voltage
V
CER
(V
)
–1
–3
–10
–30
–100
0
240
200
160
120
80
40
V
CB=10V
Ta=25C
Emitter current I
E
(mA)
Transition
frequency
f
T
(MHz
)
1
3
10
30
100
0
12
10
8
6
4
2
I
E=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector
output
capacitance
C
ob
(pF
)
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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