- 您现在的位置：买卖IC网 > PDF目录55793 > 2SD655 700 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 PDF资料下载
参数资料
| 型号： | 2SD655 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 700 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | TO-92(1), 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 176K |
| 代理商： | 2SD655 |
2SD655
Rev.2.00 Aug 10, 2005 page 2 of 5
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
30
—
V
IC = 10
A, IE = 0
Collector to emitter breakdown voltage
V(BR)CEO
15
—
V
IC = 1 mA, RBE =
∞
Emitter to base breakdown voltage
V(BR)EBO
5
—
V
IE = 10
A, IC = 0
Collector cutoff current
ICBO
—
1.0
A
VCB = 20 V, IE = 0
Base to emitter voltage
VBE
—
1.0
V
VCE = 1 V, IC = 150 mA
Collector to emitter saturation voltage
VCE(sat)
—
0.15
0.5
V
IC = 500 mA, IB = 50 mA*
2
DC current transfer ratio
hFE*
1
250
—
1200
VCE = 1 V, IC = 150 mA*
2
Gain bandwidth product
fT
—
250
—
MHz
VCE = 1 V, IC = 150 mA
Notes: 1. The 2SD655 is grouped by hFE as follows.
2. Pulse test
D
E
F
250 to 500
400 to 800
600 to 1200
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD668AD | 50 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD718O | 10 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 2SD768(K) | POWER TRANSISTOR, TO-220AB |
| 2SD768K | 6 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD788CTZ-E | 2000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD655D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 700MA I(C) | TO-92 |
| 2SD655DTZ-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SD655E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 700MA I(C) | TO-92 |
| 2SD655-E(TZ-E) | 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT NPN 15V 0.7A 3-Pin TO-92 T/R |
| 2SD655ETZ-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
发布紧急采购，3分钟左右您将得到回复。