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参数资料
| 型号： | 2SD662R |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 70 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | M-A1, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 201K |
| 代理商： | 2SD662R |
2SD0662, 2SD0662B
2
SJC00195BED
IC IB
VCE(sat) IC
IB VBE
PC Ta
IC VCE
IC VBE
hFE IC
fT IE
ICBO Ta
0
160
40
120
80
140
20
100
60
0
800
600
200
500
700
400
100
300
Collector
power
dissipation
P
C
(mW
)
Ambient temperature T
a (°C)
010
8
26
4
0
120
100
80
60
40
20
Ta
= 25°C
IB
= 2.0 mA
0.2 mA
0.4 mA
0.6 mA
1.8 mA
1.6 mA
1.4 mA
1.2 mA
1.0 mA
0.8 mA
Collector
current
I
C
(mA
)
Collector-emitter voltage V
CE (V)
0
2.0
1.6
0.4
1.2
0.8
0
120
100
80
60
40
20
VCE
= 10 V
Ta
= 75°C
25°C
25
°C
Base-emitter voltage V
BE (V)
Collector
current
I
C
(mA
)
0
2.0
1.6
0.4
1.2
0.8
0
120
100
80
60
40
20
VCE
= 10 V
Ta
= 25°C
Base current I
B (mA)
Collector
current
I
C
(mA
)
0.01
0.1
1
10
0.01
0.1
1
10
100
IC / IB
= 10
25
°C
25°C
Ta
= 75°C
Collector-emitter
saturation
voltage
V
CE(sat)
(V
)
Collector current I
C (mA)
0
1.0
0.8
0.2
0.6
0.4
0
3.0
2.5
2.0
1.5
1.0
0.5
VCE
= 10 V
Ta
= 25°C
Base-emitter voltage V
BE (V)
Base
current
I
B
(mA
)
0.01
0.1
1
10
0
360
300
240
180
120
60
VCE
= 10 V
Ta
= 75°C
25
°C
25°C
Forward
current
transfer
ratio
h
FE
Collector current I
C (mA)
1
10
100
0
160
120
40
100
140
80
20
60
VCB
= 10 V
Ta
= 25°C
Transition
frequency
f
T
(MHz
)
Emitter current I
E (mA)
0200
160
40
120
80
1
10
102
103
104
VCB
= 250 V
Ambient temperature T
a (°C)
I CBO
(T
a
)
I CBO
(T
a
=
25
°C
)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD663 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 500V 6A 80W BEC |
| 2SD664 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 7A I(C) | TO-66 |
| 2SD665 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| 2SD666 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB646/A |
| 2SD666A | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB646/A |
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