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参数资料
| 型号： | 2SD667C |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | TO-92MOD, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 46K |
| 代理商： | 2SD667C |
2SD667, 2SD667A
3
Maximum Collector Dissipation Curve
Ambient Temperature Ta (
°C)
Collector
Power
Dissipation
P
C
(W)
0.8
1.2
0.4
0
50
100
150
Typical Output Characteristics
Collector to Emitter Voltage VCE (V)
Collector
Current
I
C
(A)
1.0
0.8
0.6
0.4
0.2
02
6
10
48
IB = 0
0.5mA
1
2
5
10
15
20
25
30
35
P
C
= 0.9
W
Typical Transfer Characteristics
Base to Emitter Voltage VBE (V)
Collector
Current
I
C
(mA)
VCE = 5 V
500
200
100
50
20
10
5
2
1
0
0.2
0.6
1.0
0.4
0.8
Ta
=
75
°C
25
–25
DC Current Transfer Ratio
vs. Collector Current
Collector Current IC (mA)
DC
Current
Transfer
Ratio
h
FE
300
VCE = 5 V
Ta = 75
°C
25
–25
250
200
150
100
50
0
1
10
100
1,000
3
30
300
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD667CTZ-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SD667D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SD667DTZ-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SD667G-T9N-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:SILICON NPN EPITAXIAL |
| 2SD667G-T9N-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:SILICON NPN EPITAXIAL |
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