参数资料
型号: 2SD667C
元件分类: 小信号晶体管
英文描述: 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: TO-92MOD, 3 PIN
文件页数: 6/8页
文件大小: 46K
代理商: 2SD667C
2SD667, 2SD667A
4
Collector Current IC (mA)
Base
to
Emitter
Saturation
Voltage
V
BE(sat)
(V)
Collector
to
Emitter
Saturation
Voltage
V
CE(sat)
(V)
1.2
IC = 10 IB
Pulse
Ta = –25
°C
Ta
= –25
°C
25
75
1.0
0.8
0.6
0.4
0.2
0
0.6
0.5
0.4
0.3
0.2
0.1
0
1
10
100
1,000
3
30
300
VBE(sat)
VCE(sat)
Saturation Voltage
vs. Collector Current
Collector Current IC (mA)
Gain Bandwidth Product
vs. Collector Current
Gain
Bandwidth
Product
f
T
(MHz)
240
200
160
120
80
40
0
10
30
100
300
1,000
VCE = 5 V
Collector Output Capacitance vs.
Collector to Base Voltage
Collector to Base Voltage VCB (V)
Collector
Output
Capacitance
C
ob
(pF)
f = 1 MHz
IE = 0
200
100
50
20
10
5
2
1
5
20
100
210
50
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相关代理商/技术参数
参数描述
2SD667CTZ-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial
2SD667D 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-92VAR
2SD667DTZ-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial
2SD667G-T9N-B 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:SILICON NPN EPITAXIAL
2SD667G-T9N-K 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:SILICON NPN EPITAXIAL