参数资料
型号: 2SD667CTZ-E
元件分类: 小信号晶体管
英文描述: 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: SC-51, TO-92MOD, 3 PIN
文件页数: 3/6页
文件大小: 160K
代理商: 2SD667CTZ-E
2SD667, 2SD667A
Rev.2.00 Aug 10, 2005 page 3 of 5
Main Characteristics
Maximum Collector Dissipation Curve
Ambient Temperature Ta (
°C)
Collector
Power
Dissipation
P
C
(W)
0.8
1.2
0.4
0
50
100
150
Typical Output Characteristics
Collector to Emitter Voltage VCE (V)
Collector
Current
I
C
(A)
1.0
0.8
0.6
0.4
0.2
02
6
10
48
IB = 0
0.5mA
1
2
5
10
15
20
25
30
35
P
C
= 0.9
W
Typical Transfer Characteristics
Base to Emitter Voltage VBE (V)
Collector
Current
I
C
(mA)
VCE = 5 V
500
200
100
50
20
10
5
2
1
0
0.2
0.6
1.0
0.4
0.8
Ta
=
75
°C
25
–25
DC Current Transfer Ratio
vs. Collector Current
Collector Current IC (mA)
DC
Current
Transfer
Ratio
h
FE
300
VCE = 5 V
Ta = 75°
C
25
–25
250
200
150
100
50
0
1
10
100
1,000
330
300
Collector Current IC (mA)
Base
to
Emitter
Saturation
Voltage
V
BE(sat)
(V)
Collector
to
Emitter
Saturation
Voltage
V
CE(sat)
(V)
1.2
IC = 10 IB
Pulse
Ta = –25
°C
Ta
= –
25°
C
25
75
1.0
0.8
0.6
0.4
0.2
0
0.6
0.5
0.4
0.3
0.2
0.1
0
1
10
100
1,000
330
300
VBE(sat)
VCE(sat)
Saturation Voltage
vs. Collector Current
Collector Current IC (mA)
Gain Bandwidth Product
vs. Collector Current
Gain
Bandwidth
Product
f
T
(MHz)
240
200
160
120
80
40
0
10
30
100
300
1,000
VCE = 5 V
相关PDF资料
PDF描述
2SD667BTZ-E 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD668AB 50 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD668B 50 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD668 50 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD668D 50 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SD667D 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-92VAR
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