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参数资料
| 型号： | 2SD668D |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 50 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | TO-126MOD, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 32K |
| 代理商： | 2SD668D |
2SD668, 2SD668A
Silicon NPN Epitaxial
Application
Low frequency high voltage amplifier complementary pair with 2SB648/A
Outline
1. Emitter
2. Collector
3. Base
TO-126 MOD
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item
Symbol
2SD668
2SD668A
Unit
Collector to base voltage
V
CBO
180
V
Collector to emitter voltage
V
CEO
120
160
V
Emitter to base voltage
V
EBO
55
V
Collector current
I
C
50
mA
Collector peak current
I
C(peak)
100
mA
Collector power dissipation
P
C
11
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD669A-BP | 1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SD669A-C-BP | 1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SD669-C-BP | 1500 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SD669-D-BP | 1500 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SD718R | 8 A, 120 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD669 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial |
| 2SD669_10 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SD669_12 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SD669A | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD669AB | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-126 |
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