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参数资料
| 型号： | 2SD788CTZ-E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | SC-51, TO-92MOD, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 72K |
| 代理商： | 2SD788CTZ-E |
2SD788
Rev.2.00 Aug 10, 2005 page 2 of 5
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
20
—
V
IC = 10
A, IE = 0
Collector to emitter breakdown voltage
V(BR)CEO
20
—
V
IC = 1 mA, RBE =
∞
Emitter to base breakdown voltage
V(BR)EBO
6
—
V
IE = 10
A, IC = 0
Collector cutoff current
ICBO
—
2
A
VCB = 16 V, IE = 0
Emitter cutoff current
IEBO
—
0.2
A
VEB = 6 V, IC = 0
DC current transfer ratio
hFE*
1
160
—
500
VCE = 2 V, IC = 0.1 A
Collector to emitter saturation voltage
VCE(sat)
—
0.3
V
IC = 1 A, IB = 0.1 A
Gain bandwidth product
fT
—
100
—
MHz
VCE = 2 V,
IC = 10 mA
Collector output capacitance
Cob
—
20
—
pF
VCB = 10 V, IE = 0,
f = 1 MHz
Note:
1. The 2SD788 is grouped by hFE as follows.
C
D
160 to 320
250 to 500
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD788D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 2A I(C) | TO-92VAR |
| 2SD788DTZ-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SD788E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 2A I(C) | TO-92VAR |
| 2SD789 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SD789B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | TO-92VAR |
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