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参数资料
| 型号： | 2SD788CTZ-E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | SC-51, TO-92MOD, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 72K |
| 代理商： | 2SD788CTZ-E |
2SD788
Rev.2.00 Aug 10, 2005 page 3 of 5
Main Characteristics
150
100
50
Ambient Temperature Ta (
°C)
0
1.2
0.8
0.4
Maximum Collector Dissipation Curve
Collector
Power
Dissipation
P
C
(W)
8
410
6
2
Collector to Emitter Voltage VCE (V)
0
100
80
60
40
20
Typical Output Characteristics
Collector
Current
I
C
(mA)
0.3
0.2
0.1
0.25
0.15
0.05 mA
IB = 0
0.4
1.6
0.8
2.0
1.2
Collector to Emitter Voltage VCE (V)
0
2.0
1.6
1.2
0.8
0.4
Typical Output Characteristics
Collector
Current
I
C
(A)
20
15
10
5 mA
IB = 0
P
C
= 0.9
W
01.0
0.2
0.8
0.4
0.6
Base to Emitter Voltage VBE (V)
1,000
300
100
30
10
3
1
Typical Transfer Characteristics
Collector
Current
I
C
(mA)
VCE = 2 V
Ta = 75
°C
25
10
100
1,000
30
300
3
1
Collector Current IC (mA)
10,000
3,000
1,000
300
100
30
10
DC
Current
Transfer
Ratio
h
FE
DC Current Transfer Ratio vs.
Collector Current
Ta = 75
°C
25
–25
Pulse
VCE = 2 V
3,000
1,000
30
300
100
10
3
Collector Current IC (mA)
3.0
1.0
0.1
0.3
0.03
0.01
0.003
Collector
to
Emitter
Saturation
Voltage
V
CE(sat)
(V)
Base
to
Emitter
Saturation
Voltage
V
BE(sat)
(V)
VBE(sat)
VCE(sat)
Saturation Voltage vs. Collector Current
IC = 10 IB
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD788D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 2A I(C) | TO-92VAR |
| 2SD788DTZ-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SD788E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 2A I(C) | TO-92VAR |
| 2SD789 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SD789B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | TO-92VAR |
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