- 您现在的位置：买卖IC网 > PDF目录30596 > 2SD799 6 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB PDF资料下载
参数资料
| 型号： | 2SD799 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 6 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | 2-10A1A, SC-46, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 227K |
| 代理商： | 2SD799 |
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1960
The 2SK1960 is an N-channel vertical MOS FET. Because
it can be driven by a voltage as low as 1.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuator for low-current portable systems such as headphone
stereos and video cameras.
FEATURES
Gate can be driven by 1.5 V
Low ON resistance
RDS(on) = 0.8
MAX.
@ VGS = 1.5 V, ID = 0.1 A
RDS(on) = 0.2
MAX.
@ VGS = 4.0 V, ID = 1.5 A
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
VDSS
VGS = 0
16
V
Gate to Source Voltage
VGSS
VDS = 0
±7.0
V
Drain Current (DC)
ID(DC)
±3.0
A
Drain Current (Pulse)
ID(pulse)
PW
≤ 10 ms, duty cycle ≤ 50 %
±6.0
A
Total Power Dissipation
PT
16 cm2
× 0.7 mm ceramic substrate used
2.0
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
–55 to +150
C
Document No. D11223EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
PACKAGE DIMENSIONS (in mm)
1.6 ±0.2
4.5 ±0.1
0.42 ±0.06
0.8
MIN.
1.5
0.47
±0.06
3.0
2.5
±0.1
4.0
±0.25
0.41
+0.03
–0.05
1.5 ±0.1
S
D
G
0.42 ±0.06
Marking: NR
EQUIVALENT CURCUIT
Source (S)
Internal
diode
Gate
protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S:
D:
G:
Source
Drain
Gate
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD826G | 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SD826 | 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SD826F | 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SD867Y | 10 A, 110 V, NPN, Si, POWER TRANSISTOR |
| 2SD867O | 10 A, 110 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD80 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 30V 6A 50W BEC |
| 2SD803 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:SI NPN DIFFUSED JUNCTION MESA |
| 2SD804H | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD806 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 650V V(BR)CEO | 50A I(C) |
| 2SD809 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Audio Frequency Power Amplifier,Low Speed Switching |
发布紧急采购，3分钟左右您将得到回复。