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参数资料
| 型号： | 2SD826G |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 封装： | TO-126, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 61K |
| 代理商： | 2SD826G |
2SD826
No.538-1/6
Features
Low saturation voltage.
High hFE.
Large current capacity.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
60
V
Collector-to-Emitter Voltage
VCEO
20
V
Emitter-to-Base Voltage
VEBO
6V
Collector Current
IC
5A
Collector Current (Pulse)
ICP
100ms, 1 pulse
8
A
Collector Dissipation
PC
1.0
W
Tc=25°C10
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=50V, IE=0A
1.0
μA
Emitter Cutoff Current
IEBO
VEB=5V, IC=0A
1.0
μA
DC Current Gain
hFE1VCE=2V, IC=0.5A
120*
560*
hFE2VCE=2V, IC=3A (Pulse)
95
Continued on next page.
* : The 2SD826 is classified by 0.5A hFE as follows .
Rank
E
F
G
hFE
120 to 200
160 to 320
280 to 560
www.semiconductor-sanyo.com/network
Ordering number : EN538F
60309EA MS IM TC-00001960 / 31005TN (PC)/21599TH (KT)/5277KI/3115KI/5244KI, TS
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
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SANYO Semiconductors
DATA SHEET
2SD826
NPN Epitaxial Planar Silicon Transistor
20V / 5A, Transistor for Flash Circuit
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相关代理商/技术参数 |
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| 2SD832 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 400V V(BR)CEO | 50A I(C) | FBASE-R |
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| 2SD835 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Darlington Power Transistor |
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