参数资料
型号: 2SD826G
元件分类: 小信号晶体管
英文描述: 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126
封装: TO-126, 3 PIN
文件页数: 3/6页
文件大小: 61K
代理商: 2SD826G
2SD826
No.538-3/6
Collector-to-Base Voltage, VCB -- V
Cob -- VCB
Output
Capacitance,
Cob
-
pF
Collector Current, IC -- A
VCE(sat) -- IC
f T -- IC
Collector Current, IC -- mA
Gain-Bandwidth
Product,
f
T
-
MHz
Collector Current, IC -- mA
hFE -- IC
DC
Current
Gain,
h
FE
Collector
-to-Emitter
Saturation
V
oltage,
V
CE
(sat)
-
V
Collector
Current,
I
C
-
A
Collector-to-Emitter Voltage, VCE -- V
A S O
Ambient Temperature, Ta --
°C
PC -- Ta
Collector
Dissipation,
P
C
-
W
Base-to-Emitter Voltage, VBE -- V
Collector
Current,
I
C
-
A
IC -- VBE
ITR09927
1.0
10
7
3
5
100
10
2
27
35
100
27
35
ITR09928
f=1MHz
2
5
7
3
5
7
3
2
3
1.0
0.1
23
5
7
0.1
23
5
1.0
10
ITR09929
IC / IB=50
(Pulse)
2
3
5
10
7
1000
2
3
5
7
100
23
5
7
10
23
5
100
1000
0
12
10
8
6
4
2
0
40
120
200
160
80
ITR09930
No heat sink
Ideal
heat
dissipation
1.0
0.1
5
7
10
5
3
2
5
7
3
2
0.1
1.0
25
7
3
10
25
7
32
3
ITR09931
IC=5A
ICP=8A
DC
operation
100ms
(Pulse
)
0
0.4
0.8
1.2
1.6
2.0
5
4
3
2
1
0
ITR09925
VCE=2V
(Pulse)
2
3
5
10
7
1000
2
3
5
7
100
23
5
10
23
5
100
23
1000
ITR09926
VCE=2V
(Pulse)
VCE=10V
(Pulse)
相关PDF资料
PDF描述
2SD826 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126
2SD826F 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126
2SD867Y 10 A, 110 V, NPN, Si, POWER TRANSISTOR
2SD867O 10 A, 110 V, NPN, Si, POWER TRANSISTOR
2SD867 10 A, 110 V, NPN, Si, POWER TRANSISTOR
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