参数资料
型号: 2SD826G
元件分类: 小信号晶体管
英文描述: 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126
封装: TO-126, 3 PIN
文件页数: 4/6页
文件大小: 61K
代理商: 2SD826G
2SD826
No.538-4/6
Sample Application Circuit 1 : Electronic flash set
Tr
r
F
P
R
Supply
circuit
S
MC
DFC 05
C2
C1
+
ITR09932
E[V]
r[
Ω]
MC[
μF] C1[μF]
R[k
Ω]
C2[
μF]
Tr
P
F
S
Core
NiCd
2
2.7
0.15
to 500
100
2.2
0.01
2SD826
0.55
φ
0.23
φ
0.07
φ
EE13
FG
10 3/4T
12 3/4T
1350T
Alkali or
4 6.0
1.2
500 to
100
4.7
0.015
2SD826
0.6
φ
0.23
φ
0.08
φ
EE16
manganese
900
EFG
22 3/4T
20 3/4T
1390T
NiCd
4
5.4
0.3
500 to
100
33
0.0068
2SD826
0.6
φ
0.23
φ
0.08
φ
EE16
1200
EF
2
22 3/4T
20 3/4T
1390T
VMC -- tC(1)
Main
Capacitor
V
oltage,
V
MC
--
V
Charge Time, tC -- s
100
150
250
50
200
0
350
300
24
6
8
10
0
ITR09933
2SD826
2
NiCd battery
4
M
C=500
μF
1200
μF
750
μF
900
μF
VMC -- tC(3)
Main
Capacitor
V
oltage,
V
MC
--
V
Charge Time, tC -- s
100
150
250
50
200
0
350
300
24
6
8
10
0
ITR09935
2SD826
1
NiCd battery
2
M
C=200
μF
500
μF
300
μF
400
μF
VMC -- tC(2)
Main
Capacitor
V
oltage,
V
MC
--
V
Charge Time, tC -- s
100
150
250
50
200
0
350
300
24
6
8
10
0
ITR09934
2SD826
1
Manganese or alkali battery
4
MC=500
μF
750μ
F
900μ
F
相关PDF资料
PDF描述
2SD826 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126
2SD826F 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126
2SD867Y 10 A, 110 V, NPN, Si, POWER TRANSISTOR
2SD867O 10 A, 110 V, NPN, Si, POWER TRANSISTOR
2SD867 10 A, 110 V, NPN, Si, POWER TRANSISTOR
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2SD835 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Darlington Power Transistor
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