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参数资料
| 型号： | 2SD879 |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SOT-89, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 89K |
| 代理商： | 2SD879 |
UTC2SD879
NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD
1
QW-R208-010,A
1.5V, 3V STROBE APPLICATIONS
DESCRIPTION
The UTC 2SD879 is a NPN epitaxial silicon transistor,
designed for 1.5V and 3V strobe applications.
FEATURES
*In applications where two NiCd batteries are used to
provide 2.4V, two 2SD879s are used.
*The charge time is approximately 1 second faster than
that of germanium transistors.
*Less power dissipation because of lwo
Collector-to-Emitter Voltage VCE(sat), permitting more
flashes of light to be emitted.
*Large current capacity and highly resistant to break-down.
*Excellent linearity of hFE in the region from low current to
high current.
SOT-89
1
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEX
20
V
Collector-Emitter Voltage
VCEO
10
V
Emitter-Base Voltage
VEBO
6
V
Collector Dissipation
PD
1
W
Collector Current(DC)
Ic
3
A
Collector Current(PULSE)
Icp
5
A
Junction Temperature
Tj
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: PULSE CONDITION -> 100 ms single pulse
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Voltage
VCBO
IC=10uA, IE=0
30
V
Collector-Emitter Voltage
VCEX
IC=1mA, VBE=3V
20
V
Collector-Emitter Voltage
VCEO
IC=1mA, RBE=∞
10
V
Emitter-Base Voltage
VEBO
IE=10uA, IC=0
6
V
Base-Emitter Voltage
VBE
VCE=-1V,IC=-2A
0.83
1.5
V
Collector Cut-Off Current
ICBO
VCB=20V,IE=0
1
A
Emitter Cut-Off Current
IEBO
VEB=4V,Ic=0
1
A
DC Current Gain
hFE
VCE=2V, Ic=3A (pulse)
140
210
400
Collector-Emitter Saturation Voltage
VCE(sat)
Ic=3A,IB=60mA (pulse)
0.3
0.4
V
Current Gain Bandwidth Product
fT
VCE=10V, Ic=50mA
200
MHz
Output Capacitance
Cob
VCB=10V,f=1MHz
30
pF
Pulse: 1mS
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD880-GR-BP | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD880-Q-BP | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD880-Y-BP | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD880L-TA3-T | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD880Y | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD879_11 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:1.5V, 3V STROBE APPLICATIONS |
| 2SD879_2 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:1.5V, 3V STROBE APPLICATIONS |
| 2SD879G-AB3-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:1.5V, 3V STROBE APPLICATIONS |
| 2SD879G-T92-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:1.5V, 3V STROBE APPLICATIONS |
| 2SD879G-T92-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:1.5V, 3V STROBE APPLICATIONS |
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