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参数资料
| 型号： | 2SD880-Y-BP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 209K |
| 代理商： | 2SD880-Y-BP |
2SD880-Q
NPN Silicon
Power Transistors
Features
Power amplifier applications
MaximumRatings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
60
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current
3
A
PC
Collector power dissipation
1.5
W
TJ
Junction Temperature
-55 to +150
TSTG
Storage Temperature
-55 to +150
ElectricalCharacteristics@25OCUnlessOtherwiseSpecified
Symbol
Parameter
Min
Type
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=50mAdc, IB=0)
60
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
60
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
7
---
Vdc
ICBO
Collector-Base Cutoff Current
(VCB=60Vdc,IE=0)
---
100
uAdc
IEBO
Emitter-Base Cutoff Current
(VEB=7Vdc, IC=0)
---
100
uAdc
ON CHARACTERISTICS
hFE
Forward Current Transfer ratio
(IC=500mAdc, VCE=5Vdc)
60
---
300
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=3Adc, IB=300mAdc)
---
1
Vdc
VBE
Base-Emitter Voltage
(IC=0.5Adc,VCE=5Vdc)
---
1
Vdc
fT
Transistor Frequency
(IC=500mAdc, VCE=5Vdc)
---
3
---
MHz
Cob
Collector Output Capacitance
(VCB=10Vdc, IE=0, f=1MHz)
---
70
---
pF
ton
Turn on time
---
0.8
---
us
ts
Storage time
---
1.5
---
us
tf
Fall time
IB1=-IB2=0.2A, IC=2A,
VCC=30V, PW=20us
---
0.8
---
us
ClassificationOFhFE(1)
Rank
Q
Y
GR
Range
60-120
100-200
150-300
TO-220
omponents
20736 Marilla Street Chatsworth
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M C C
Revision: A
2011/01/01
TM
Micro Commercial Components
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
PIN 1.
BASE
PIN 2.
COLLECTOR
PIN 3.
EMITTER
G
R
B
Q
H
U
L
D
C
J
K
A
F
S
T
1
3
2
N
V
MIN
MAX
NOTE
A
.560
.625
14.22
15.88
B
.380
.420
9.65
10.67
C
.140
.190
3.56
4.82
D
.020
.045
0.51
1.14
F
.139
.161
3.53
4.09
G
.190
.110
2.29
2.79
H
---
.250
---
6.35
J
.012
.025
0.30
0.64
K
.500
.580
12.70
14.73
L
.045
.060
1.14
1.52
N
.190
.210
4.83
5.33
Q
.100
.135
2.54
3.43
R
.080
.115
2.04
2.92
S
.045
.055
1.14
1.39
T
.230
.270
5.84
6.86
U
-----
.050
-----
1.27
V
.045
-----
1.15
-----
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.
2SD880-Y
2SD880-GR
www.mccsemi.com
1 of 2
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
相关PDF资料 |
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| 2SD880L-TA3-T | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD880Y | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD880Q | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD880YP | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD880QP | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD882 | 功能描述:两极晶体管 - BJT NPN Medium Power +30VCEO +5VBEO RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD882_05 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 2SD882_07 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:NPN medium power transistor |
| 2SD882_08 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 2SD882ANL | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
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