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参数资料
| 型号： | 2SD968R |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-62, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 173K |
| 代理商： | 2SD968R |
573
Transistor
2SD0968, 2SD0968A
PC — Ta
IC — VCE
IC — IB
VCE(sat) — IC
VBE(sat) — IC
hFE — IC
fT — IE
Cob — VCB
0
160
40
120
80
140
20
100
60
0
1.4
1.2
0.4
1.0
0.8
0.2
0.6
Printed circut board: Copper
foil area of 1cm2 or more, and
the board thickness of 1.7mm
for the collector portion.
Ambient temperature Ta (C)
Collector
power
dissipation
P
C
(W
)
012
10
8
26
4
0
1.2
1.0
0.8
0.6
0.4
0.2
Ta=25C
I B
=20mA
8mA
10mA
12mA
18mA
16mA
14mA
6mA
4mA
2mA
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
015
9
36
12
0
1.2
1.0
0.8
0.6
0.4
0.2
V
CE=10V
Ta=25C
Base current I
B
(mA)
Collector
current
I
C
(A
)
1
10
100
1000
3
30
300
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
I
C/IB=10
25C
–25C
Ta=75C
Collector current I
C
(mA)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C/IB=10
Ta=–25C
25C
75C
Collector current I
C
(mA)
Base
to
emitter
saturation
voltage
V
BE(sat)
(V
)
1
10
100
1000
3
30
300
0
300
250
200
150
100
50
V
CE=10V
Ta=75C
25C
–25C
Collector current I
C
(mA)
Forward
current
transfer
ratio
h
FE
–1
–3
–10
–30
–100
0
200
160
120
80
40
V
CB=10V
Ta=25C
Emitter current I
E
(mA)
Transition
frequency
f
T
(MHz
)
1
3
10
30
100
0
50
40
30
20
10
I
E=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector
output
capacitance
C
ob
(pF
)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD969 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer type(Silicon PNP epitaxial planer type) |
| 2SD970 | 制造商:SAVANTIC 制造商全称:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2SD970(K) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 120V V(BR)CEO | 8A I(C) | TO-220AB |
| 2SD970K | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon NPN Triple Diffused |
| 2SD970K(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
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