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参数资料
| 型号： | 2SD968R |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-62, 3 PIN |
| 文件页数： | 3/3页 |
| 文件大小： | 173K |
| 代理商： | 2SD968R |
2SC3420
2006-11-09
3
C
ollec
tor-e
mi
tte
rs
atu
rati
on
vo
ltag
e
V
CE
(s
at
)
(V
)
C
ollect
or
c
urre
nt
I C
(
A
)
Collector-emitter voltage VCE (V)
IC – VCE
Co
llect
or
cu
rre
nt
I C
(
A
)
Base-emitter voltage VBE (V)
IC – VBE
C
ollect
or
c
urre
nt
I C
(
A
)
Collector current IC (A)
hFE – IC
D
C
c
urr
en
tg
ai
n
h
FE
Collector-emitter voltage VCE (V)
Safe Operating Area
Collector current IC (A)
VCE (sat) – IC
0
Common emitter
Tc = 25°C
10
6
3
4
5
6
30
100
50
70
150
20
IB = 10 mA
0
200
2
1
2
4
8
0.03
300
Common emitter
VCE = 2 V
10
30
50
100
1000
0.1
1
10
25
Tc = 100°C
3
0.3
0.01
500
Common emitter
VCE = 2 V
0
1
4
5
6
0.6
0.8
1.2
Tc = 100°C
25
1.4
1.0
0.2
0.4
0
2
3
7
8
25
Tc = 100°C
Common emitter
IC/IB = 40
3
0.05
0.1
0.3
0.5
1
25
0.03
25
0.03
0.1
1
10
3
0.3
0.01
IC max (pulsed)**
1
3
10
30
50
0.1
0.3
1
3
5
* : Single nonrepetitive pulse
Tc = 25°C
**: Pulse width = 10 ms (max)
Duty cycle = 30% (max)
Tc = 25°C
Curves must be derated linearly
with increase in temperature
0.5
10
IC max (continuous)
DC operation
Tc = 25°C
10 ms*
100 ms*
VCEO max
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD969 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer type(Silicon PNP epitaxial planer type) |
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| 2SD970(K) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 120V V(BR)CEO | 8A I(C) | TO-220AB |
| 2SD970K | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon NPN Triple Diffused |
| 2SD970K(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
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