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参数资料
| 型号： | 2SJ107-BL |
| 元件分类： | 小信号晶体管 |
| 英文描述： | P-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | 2-4E1C, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 182K |
| 代理商： | 2SJ107-BL |
2SJ107
2003-03-25
1
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ107
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V)
Low RDS (ON): RDS (ON) = 40 (typ.)
Small package
Complementary to 2SK366
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
25
V
Gate current
IG
-10
mA
Drain power dissipation
PD
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = 25 V, VDS = 0
1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = 100 mA
25
V
Drain current
IDSS
(Note 1)
VDS = -10 V, VGS = 0
-2.6
-20
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = -10 V, ID = -0.1 mA
0.2
2.0
V
Forward transfer admittance
Yfs
VDS = -10 V, VGS = 0, f = 1 kHz
(Note 2)
12
30
mS
Input capacitance
Ciss
VDS = -10 V, VGS = 0, f = 1 MHz
105
pF
Reverse transfer capacitance
Crss
VGD = 10 V, ID = 0, f = 1 MHz
32
pF
Drain-source ON resistance
RDS (ON)
VDS = -10 mV, VGS = 0
(Note 2)
40
W
Note 1: IDSS classification GR: -2.6~-6.5 mA, BL: -6~-12 mA, V: -10~-20 mA
Note 2: Condition of the typical value IDSS = -5 mA
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1C
Weight: 0.13 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ107-BL(F) | 制造商:Toshiba 功能描述:Cut Tape |
| 2SJ107GR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | P-CHANNEL | 2.6MA I(DSS) | SPAK |
| 2SJ107-GR(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SJ107V | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | P-CHANNEL | 10MA I(DSS) | SPAK |
| 2SJ108 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:P CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS) |
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