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参数资料
| 型号： | 2SJ108-BL |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 12 mA, 25 V, P-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | 2-4E1C, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 647K |
| 代理商： | 2SJ108-BL |
2SJ108
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ108
Low Noise Audio Amplifier Applications
Recommended for first stages of EQ amplifiers and MC head
amplifiers.
High |Yfs|: |Yfs| = 22 mS (typ.)
(VDS = 10 V, VGS = 0, IDSS = 3 mA)
Low noise: En = 0.95 nV/Hz1/2 (typ.)
(VDS = 10 V, ID = 1 mA, f = 1 kHz)
High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V)
Complementary to 2SK370
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
25
V
Gate current
IG
10
mA
Drain power dissipation
PD
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = 25 V, VDS = 0
1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = 100 μA
25
V
Drain current
IDSS
(Note)
VDS = 10 V, VGS = 0
2.6
20
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 μA
0.15
2.0
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz
8
22
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
105
pF
Reverse transfer capacitance
Crss
VGD = 10 V, ID = 0, f = 1 MHz
32
pF
NF (1)
VDS = 10 V, ID = 1 mA, RG = 1 kΩ,
f
= 10 Hz
1.0
10
Noise figure
NF (2)
VDS = 10 V, ID = 1 mA, RG = 1 kΩ,
f
= 1 kHz
0.5
2
dB
Note: IDSS classification GR: 2.6~6.5 mA, BL: 6.0~12 mA, V: 10~20 mA
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1C
Weight: 0.13 g (typ.)
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ108GR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | P-CHANNEL | 2.6MA I(DSS) | SPAK |
| 2SJ108V | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | P-CHANNEL | 10MA I(DSS) | SPAK |
| 2SJ109 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:P CAHNNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER, DIFFERENTIAL AMPLIFIER APPLICATIONS) |
| 2SJ109BL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | P-CHANNEL | DUAL | 6MA I(DSS) | ZIP |
| 2SJ109-BL | 制造商:Toshiba 功能描述:Bulk |
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