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参数资料
| 型号： | 2SJ108-BL |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 12 mA, 25 V, P-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | 2-4E1C, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 647K |
| 代理商： | 2SJ108-BL |
2SK2936
Rev.4.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
45
A
Drain peak current
ID(pulse)
Note1
180
A
Body-drain diode reverse drain current
IDR
45
A
Avalanche current
IAP
Note3
45
A
Avalanche energy
EAR
Note3
173
mJ
Channel dissipation
Pch
Note2
35
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg
≥ 50
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
60
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
V
IG = ±100
A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
10
A
VDS = 60 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.5
—
2.5
V
ID = 1 mA, VDS = 10 V
RDS(on)
—
0.010
0.013
ID = 20 A, VGS = 10 V
Note4
Static drain to source on state
resistance
RDS(on)
—
0.015
0.025
ID = 20 A, VGS = 4 V
Note4
Forward transfer admittance
|yfs|
24
40
—
S
ID = 20 A, VDS = 10 V
Note4
Input capacitance
Ciss
—
2200
—
pF
Output capacitance
Coss
—
1050
—
pF
Reverse transfer capacitance
Crss
—
320
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
25
—
ns
ID = 20 A, VGS = 10 V
Rise time
tr
—
200
—
ns
Turn-off delay time
td(off)
—
320
—
ns
Fall time
tf
—
240
—
ns
VGS = 10 V, ID = 20 A,
RL = 1.5
Body–drain diode forward voltage
VDF
—
0.95
—
V
IF = 45A, VGS = 0
Body–drain diode reverse
recovery time
trr
—
60
—
ns
IF = 45A, VGS = 0
diF/ dt = 50 A/
s
Note:
4. Pulse test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ108GR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | P-CHANNEL | 2.6MA I(DSS) | SPAK |
| 2SJ108V | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | P-CHANNEL | 10MA I(DSS) | SPAK |
| 2SJ109 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:P CAHNNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER, DIFFERENTIAL AMPLIFIER APPLICATIONS) |
| 2SJ109BL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | P-CHANNEL | DUAL | 6MA I(DSS) | ZIP |
| 2SJ109-BL | 制造商:Toshiba 功能描述:Bulk |
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