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参数资料
| 型号： | 2SJ108-GR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 6.5 mA, 25 V, P-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | 2-4E1C, 3 PIN |
| 文件页数： | 5/5页 |
| 文件大小： | 647K |
| 代理商： | 2SJ108-GR |
2SK2936
Rev.4.00 Sep 07, 2005 page 5 of 7
Pulse Width
PW (S)
Normalized
Transient
Thermal
Impedance
γ s
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
Channel Temperature Tch (
°C)
Repetitive
Avalanche
Energy
E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Source to Drain Voltage
VSD (V)
Reverse
Drain
Current
I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
D. U. T
Rg
IAP
Monitor
VDS
Monitor
VDD
50
Vin
15 V
0
ID
VDS
IAP
V(BR)DSS
L
VDD
EAR =
L I
AP
2
2
1
VDSS
VDSS – VDD
Avalanche Test Circuit
Avalanche Waveform
50
40
30
20
10
0
0.4
0.8
1.2
1.6
2.0
200
160
120
80
40
25
50
75
100
125
150
0
IAP = 45 A
VDD = 25 V
duty < 0.1 %
Rg > 50
VGS = 0, –5 V
10 V
5 V
Pulse Test
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
DM
P
PW
T
D =
PW
T
ch – c(t) = s (t)
ch – c
ch – c = 3.57
°C/W, Tc = 25°C
θ
γ
θ
Tc = 25
°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pulse
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ108V | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | P-CHANNEL | 10MA I(DSS) | SPAK |
| 2SJ109 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:P CAHNNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER, DIFFERENTIAL AMPLIFIER APPLICATIONS) |
| 2SJ109BL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | P-CHANNEL | DUAL | 6MA I(DSS) | ZIP |
| 2SJ109-BL | 制造商:Toshiba 功能描述:Bulk |
| 2SJ109GR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | P-CHANNEL | DUAL | 2.6MA I(DSS) | ZIP |
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