- 您现在的位置：买卖IC网 > PDF目录49986 > 2SJ117 7 ohm, POWER, FET, TO-220AB PDF资料下载
参数资料
| 型号： | 2SJ117 |
| 元件分类： | JFETs |
| 英文描述： | 7 ohm, POWER, FET, TO-220AB |
| 文件页数： | 2/8页 |
| 文件大小： | 41K |
| 代理商： | 2SJ117 |
2SJ117
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
–400
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
–2
A
Drain peak current
I
D(pulse)
–4
A
Body to drain diode reverse drain current
I
DR
–2
A
Channel dissipation
Pch*
1
40
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. Value at T
C = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–400
—
V
I
D = –10 mA, VGS = 0
Gate to source leak current
I
GSS
——±1
A
V
GS = ±20 V, VDS = 0
Zero gate voltage drain current I
DSS
——–1
mA
V
DS = –320 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
–2.0
—
–5.0
V
I
D = –1 mA, VDS = –10 V
Static drain to source on state
R
DS(on)
—5
7
I
D = –1 A, VGS = –15 V*
1
resistance
Forward transfer admittance
|y
fs|
0.4
0.7
—
S
I
D = –1 A, VDS = –20 V*
1
Input capacitance
Ciss
—
520
—
pF
V
DS = –10 V, VGS = 0,
Output capacitance
Coss
—
110
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
15
—
pF
Turn-on delay time
t
d(on)
—
10
—
ns
I
D = –2 A, VGS = –15 V,
Rise time
t
r
—
25
—
ns
R
L = 15
Turn-off delay time
t
d(off)
—45
—
ns
Fall time
t
f
—35
—
ns
Body to drain diode forward
voltage
V
DF
—
–0.8
—
V
I
F = –1 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
300
—
ns
I
F = –1 A, VGS = 0,
di
F/dt = 100 A/s
Note:
1. Pulse test
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ125-12-1C | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236 |
| 2SJ128 | 2 A, 100 V, 1 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ132-Z-T2 | 2 A, 30 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ132 | 2 A, 30 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ139 | 10 A, 100 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ118 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SILICON P-CHANNEL MOS FET |
| 2SJ119 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SILICON P-CHANNEL MOS FET |
| 2SJ120L | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 40V V(BR)DSS | 2A I(D) | TO-252VAR |
| 2SJ120S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 40V V(BR)DSS | 2A I(D) | TO-252VAR |
| 2SJ122 | 制造商: 功能描述: 制造商:undefined 功能描述: |
发布紧急采购，3分钟左右您将得到回复。