- 您现在的位置：买卖IC网 > PDF目录41530 > 2SJ186 500 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF资料下载
参数资料
| 型号： | 2SJ186 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | UPAK-3 |
| 文件页数： | 10/11页 |
| 文件大小： | 57K |
| 代理商： | 2SJ186 |
2SJ186
6
1,000
–1
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Body to Drain Diode Reverse
Recovery Time
–0.01
500
200
100
50
20
10
–0.02
–0.05 –0.1 –0.2
–0.5
Pulse Test
Ta = 25°C
di/dt = 50 A/
s
VGS = 0
1,000
–20
–50
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
–10
–30
–40
Capacitance vs.
Drain to Source Voltage
0
100
10
1
VGS = 0
f = 1 MHz
Crss
Coss
Ciss
0
410
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
–200
–800
26
8
0
–600
–400
0
–4
–16
–20
–12
–8
Gate
to
Source
Voltage
V
GS
(V)
–1,000
VDD = –100 V
–150 V
–200 V
VDD = –200 V
–150 V
–200 V
VDS
VGS
ID = –0.5 A
100
–0.05
–1
Drain Current ID (A)
Switching
Time
t
(ns)
–0.02
–0.1
–0.5
–0.01
–0.2
Switching Characteristics
50
20
10
5
2
1
VGS = 10 V
PW = 2
s
duty < 1%
VDD –30V
tf
td (on)
tr
td (off)
=
.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ195TP | 4 A, 100 V, 0.55 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ195TP-FA | 4 A, 100 V, 0.55 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ315 | 5 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SK1717TE12R | 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1998 | 45 A, 60 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ186CY(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ186CYEL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ186CYTL | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ187 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ187TD | 制造商:DC 功能描述:* |
发布紧急采购，3分钟左右您将得到回复。