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参数资料
| 型号： | 2SJ186 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | UPAK-3 |
| 文件页数： | 9/11页 |
| 文件大小： | 57K |
| 代理商： | 2SJ186 |
2SJ186
5
–20
–8
–20
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
–16
–4
–12
–16
0
–8
–12
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Pulse Test
–0.5 A
ID = –0.2 A
–1 A
100
–0.05
–1
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
–0.02
–0.1
–0.01
Static Drain to Source on State
Resistance vs. Drain Current
–0.2
50
20
10
5
2
1
VGS = –10 V
–15 V
Pulse Test
–0.5
24
40
160
Case Temperature TC (°C)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
20
8
0
80
120
4
12
16
Static Drain to Source on State
Resistance vs. Case Temperature
–40
Pulse Test
VGS = –10 V
ID = –0.2 A
–0.5 A
–1 A
1.0
–0.1
Drain Current ID (A)
Forward
Transfer
Admittance
yfs
(S)
0.5
0.05
0.01
0.1
0.2
Forward Transfer Admittance
vs. Drain Current
–0.01
0.02
Pulse Test
VDS = –20 V
TC = –25°C
75°C
25°C
–0.02
–0.05 –0.1 –0.2
–0.5
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PDF描述 |
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| 2SJ315 | 5 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ186CY(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ186CYEL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ186CYTL | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ187 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ187TD | 制造商:DC 功能描述:* |
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