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参数资料
| 型号： | 2SJ217-E |
| 元件分类： | JFETs |
| 英文描述： | 45 A, 60 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-65, TO-3P, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 82K |
| 代理商： | 2SJ217-E |
2SJ217
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–45
A
Drain peak current
ID (pulse)
Note 1
–180
A
Body to drain diode reverse drain current
IDR
–45
A
Channel dissipation
Pch
Note 2
150
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–60
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±20
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
–250
A
VDS = –50 V, VGS = 0
Gate to source cutoff voltage
VGS (off)
–1.0
—
–2.0
V
ID = –1 mA, VDS = –10 V
RDS (on)
—
0.033
0.042
ID = –20 A, VGS = –10 V
Note 3
Static drain to source on state resistance
RDS (on)
—
0.045
0.06
ID = –20 A, VGS = –4 V
Note 3
Forward transfer admittance
|yfs|
16
25
—
S
ID = –20 A, VDS = –10 V
Note 3
Input capacitance
Ciss
—
3800
—
pF
Output capacitance
Coss
—
2000
—
pF
Reverse transfer capacitance
Crss
—
490
—
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
—
30
—
ns
Rise time
tr
—
235
—
ns
Turn-off delay time
td (off)
—
670
—
ns
Fall time
tf
—
450
—
ns
ID = –20 A
VGS = –10 V
RL = 1.5
Body to drain diode forward voltage
VDF
—
–1.35
—
V
IF = –45 A, VGS = 0
Body to drain diode reverse recovery time
trr
—
300
—
ns
IF = –45 A, VGS = 0
diF/dt = 50 A/
s
Note:
3. Pulse test
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| 2SJ218 | 制造商:Renesas Electronics Corporation 功能描述:MOSFET P LOGIC TO-3PFM |
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