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参数资料
| 型号： | 2SJ217-E |
| 元件分类： | JFETs |
| 英文描述： | 45 A, 60 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-65, TO-3P, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 82K |
| 代理商： | 2SJ217-E |
2SJ217
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(A)
Typical Foward Transfer Characteristics
–100
0
–20
–40
–60
–80
0
–4
–8
–12
–16
–20
–50
0
–10
–20
–30
–40
0
–1–2–3–4–5
Tc = –25°C
25°C
75°C
200
0
100
50
150
0
50
100
200
150
VDS = –10 V
Pulse Test
–10 V
–6 V
–5 V
–4 V
–3 V
VGS = –2 V
Pulse Test
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
–100
–50
–20
–10
–5
–2
–1
–2
–5
–10
–20
–50 –100
–200
Ta = 25°C
PW
= 10
ms
(1
shot)
DC
Operation
(Tc
=
25°C)
1 ms
10
s
100
s
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–2.5
0
–0.5
–1.0
–1.5
–2.0
0–2
–4
–6
–8
–10
Pulse Test
ID = –10 A
–20 A
–50 A
Drain Current
ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
0.1
0.05
0.01
0.02
0.005
–10
–50 –100
–2
–20
–200
–5
0.5
0.2
VGS = –4 V
–10 V
Pulse Test
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| 2SJ218 | 制造商:Renesas Electronics Corporation 功能描述:MOSFET P LOGIC TO-3PFM |
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